Volatile memory device including stacked memory cells

ABSTRACT

Some embodiments include apparatuses and methods of operating the apparatuses. One of the apparatuses includes volatile memory cells located along a pillar that has a length extending in a direction perpendicular to a substrate of a memory device. Each of the volatile memory cells includes a capacitor and at least one transistor. The capacitor includes a capacitor plate. The capacitor plate is either formed from a portion a semiconductor material of the pillar or formed from a conductive material separated from the pillar by a dielectric.

RELATED APPLICATION

This application claims the benefit of priority to U.S. Application Ser.No. 62/551,542, filed 29 Aug. 2017, which is incorporated herein byreference in its entirety.

BACKGROUND

Memory devices are widely used in computers and many other electronicitems to store information. Memory devices are generally categorizedinto two types: volatile memory device and non-volatile memory device.An example of a volatile memory device includes a dynamic random accessmemory (DRAM) device. An example of a non-volatile memory deviceincludes a flash memory device (e.g., a flash memory stick). A memorydevice usually has numerous memory cells. In a volatile memory device,information stored in the memory cells are lost if supply power isdisconnected from the memory device. In a non-volatile memory device,information stored in the memory cells are retained even if supply poweris disconnected from the memory device.

The description herein involves volatile memory devices. Mostconventional volatile memory devices have a planar structure (i.e., atwo-dimensional structure) in which the memory cells are formed in asingle level of the device. As demand for device storage densityincreases, many conventional techniques provide ways to shrink the sizeof the memory cell in order to increase device storage density for agiven device area. However, physical limitations and fabricationconstraints may pose a challenge to such conventional techniques if thememory cell size is to be shrunk to a certain dimension. Unlike someconventional memory devices, the memory devices described herein includefeatures that can overcome challenges faced by conventional techniques.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice including volatile memory cells, according to some embodimentsdescribed herein.

FIG. 2A shows a schematic diagram of a portion of a memory deviceincluding a memory array, according to some embodiments describedherein.

FIG. 2B shows a schematic diagram of a portion of the memory device ofFIG. 2A.

FIG. 2C is a chart showing example values of voltages provided tosignals of the memory device of FIG. 2B during example write and readoperations, according to some embodiments described herein.

FIG. 2D shows a side view (e.g., cross-sectional view) of a structure ofa portion of the memory device schematically shown in FIG. 2B, in whichthe memory cell structure of each memory cell can include parts from adouble-pillar, according to some embodiments described herein.

FIG. 2E through FIG. 2I show different portions (e.g., partial topviews) of the memory device of FIG. 2D including some elements of thememory device viewed from different sectional lines of FIG. 2D,according to some embodiments described herein.

FIG. 3A shows a schematic diagram of a portion of a memory device thatcan be a variation of the memory device of FIG. 2A, according to someembodiments described herein.

FIG. 3B shows a schematic diagram of a portion of the memory device ofFIG. 3A.

FIG. 3C is a chart showing example values of voltages provided tosignals of the memory device of FIG. 3B, during example write and readoperations, according to some embodiments described herein.

FIG. 3D is a chart showing example values of voltages provided tosignals of the memory device of FIG. 3B, during additional example writeand read operations of the memory device, according to some embodimentsdescribed herein.

FIG. 3E shows a side view (e.g., cross-sectional view) of a structure ofa portion of the memory device schematically shown in FIG. 3B, accordingto some embodiments described herein.

FIG. 3F shows a portion (e.g., partial top views) of the memory deviceof FIG. 3E, according to some embodiments described herein.

FIG. 4A shows a schematic diagram of a portion of a memory deviceincluding memory cells, in which the memory cell structure of eachmemory cell can include parts from a single-pillar, according to someembodiments described herein.

FIG. 4B shows a side view (e.g., cross-sectional view) of a structure ofa portion of the memory device schematically shown in FIG. 4A, accordingto some embodiments described herein.

FIG. 4C shows a portion of the memory device of FIG. 4B.

FIG. 4D through FIG. 4F show different portions (e.g., partial topviews) of the memory device of FIG. 4C including some of the elements ofthe memory device viewed from different sectional lines of FIG. 4C,according to some embodiments described herein.

FIG. 4G shows a schematic diagram of a portion of the memory device ofFIG. 4A.

FIG. 4H is a chart showing example values of voltages provided to thesignals of the portion of the memory device of FIG. 4G during threedifferent example write operations, according to some embodimentsdescribed herein.

FIG. 4I is a flow chart showing different stages of a read operation ofthe memory device of FIG. 4A, according to some embodiments describedherein.

FIG. 4J shows a schematic diagram of a portion of the memory device ofFIG. 2A.

FIG. 4K is a chart showing values of signals in FIG. 4J during apre-sense stage based on impact ionization (II) current mechanism.

FIG. 4K′ is a chart showing values of signals in FIG. 4J during apre-sense stage using an alternative pre-sense scheme based ongate-induced drain-leakage (GIDL) current mechanism.

FIG. 4L shows a schematic diagram of a portion of the memory device ofFIG. 4A.

FIG. 4M is a chart showing values of signals in FIG. 4L during a sensestage using a sense scheme based threshold voltage shift.

FIG. 4M′ is a chart showing values of signals in FIG. 4L during a sensestage using an alternative sense scheme based on a property (e.g.,self-latching) of a built-in bipolar junction transistor (BJT).

FIG. 4N is a graph showing relationships between some signals in FIG.4M.

FIG. 4O shows a schematic diagram of a portion of the memory device ofFIG. 4A.

FIG. 4P is a chart showing values of signals in FIG. 4O during a resetstage.

FIG. 4Q shows a schematic diagram of a portion of the memory device ofFIG. 4A.

FIG. 4R is a chart showing values of signals in FIG. 4Q during a restorestage.

FIG. 5A shows a schematic diagram of a portion of another memory deviceincluding memory cells having memory cell structure from asingle-pillar, according to some embodiments described herein.

FIG. 5B shows a side view (e.g., cross-sectional view) of a structure ofa portion of the memory device schematically shown in FIG. 5A, accordingto some embodiments described herein.

FIG. 5C shows a portion of the memory device of FIG. 5B.

FIG. 5D shows a schematic diagram of a portion of the memory device ofFIG. 5A including two memory cells.

FIG. 5E is a chart showing example values of voltages provided to thesignals of the portion of the memory device of FIG. 5D during threedifferent example write operations, according to some embodimentsdescribed herein.

FIG. 5F is a flow chart showing different stages of a read operation ofthe memory device of FIG. 5A through FIG. 5C, according to someembodiments described herein.

FIG. 5G shows a schematic diagram of a portion of the memory device ofFIG. 5A.

FIG. 5H is a chart showing values of signals in FIG. 5G during apre-sense stage based on impact ionization current mechanism.

FIG. 5H′ is a chart showing values of signals in FIG. 5G during apre-sense stage using an alternative pre-sense scheme based on GIDLcurrent mechanism.

FIG. 5I shows a schematic diagram of a portion of the memory device ofFIG. 5A.

FIG. 5J is a chart showing values of signals in FIG. 5I during a sensestage using a sense scheme based threshold voltage shift.

FIG. 5J′ is a chart showing values of signals in FIG. 5I during a sensestage using an alternative sense scheme based on a property (e.g.,self-latching) of a built-in bipolar junction transistor.

FIG. 5K shows a schematic diagram of a portion of the memory device ofFIG. 5A.

FIG. 5L is a chart showing values of signals in FIG. 5K during a resetstage.

FIG. 5M shows a schematic diagram of a portion of the memory device ofFIG. 5A.

FIG. 5N is a chart showing values of signals in FIG. 5M during a restorestage.

FIG. 6 shows a structure of a portion of a memory cell located along asegment of a pillar of a memory device, according to some embodimentsdescribed herein.

DETAILED DESCRIPTION

The memory device described herein includes volatile memory cells thatare arranged in a 3-D (three-dimensional) structure. In the 3-Dstructure, the memory cells are vertically stacked over each other inmultiple levels of the memory device. Since the memory cells arevertically stacked, storage density of the described memory device canbe higher than that of a conventional volatile memory device for a givendevice area. The 3-D structure also allows an increase in storagedensity of the described memory device without aggressively reducingfeature size (e.g., memory cell size). The memory device describedherein can have an effective feature size of 2F² or less. Differentvariations of the described memory device are discussed in detail belowwith reference to FIG. 1 through FIG. 6.

FIG. 1 shows a block diagram of an apparatus in the form of a memorydevice 100 including volatile memory cells, according to someembodiments described herein. Memory device 100 includes a memory array101, which can contain memory cells 102. Memory device 100 is volatilememory device (e.g., a DRAM device), such that memory cells 102 arevolatile memory cells. Thus, information stored in memory cells 102 maybe lost (e.g., invalid) if supply power (e.g., supply voltage VDD) isdisconnected from memory device 100. Hereinafter, VDD is referred torepresent some voltage levels, however, they are not limited to a supplyvoltage (e.g., VDD) of the memory device (e.g., memory device 100). Forexample, if the memory device (e.g., memory device 100) has an internalvoltage generator (not shown in FIG. 1) that generates an internalvoltage based on VDD, such an internal voltage may be used instead ofVDD.

In a physical structure of memory device 100, memory cells 102 can beformed vertically (e.g., stacked over each other in different layers) indifferent levels over a substrate (e.g., semiconductor substrate) ofmemory device 100. The structure of memory array 101 including memorycells 102 can include the structure of memory arrays and memory cellsdescribed below with reference to FIG. 2A through FIG. 6.

As shown in FIG. 1, memory device 100 can include access lines 104 (or“word lines”) and data lines (e.g., bit lines) 105. Memory device 100can use signals (e.g., word line signals) on access lines 104 to accessmemory cells 102 and data lines 105 to provide information (e.g., data)to be stored in (e.g., written) or sensed (e.g., read) from memory cells102.

Memory device 100 can include an address register 106 to receive addressinformation ADDR (e.g., row address signals and column address signals)on lines (e.g., address lines) 107. Memory device 100 can include rowaccess circuitry (e.g., x-decoder) 108 and column access circuitry(e.g., y-decoder) 109 that can operate to decode address informationADDR from address register 106. Based on decoded address information,memory device 100 can determine which memory cells 102 are to beaccessed during a memory operation. Memory device 100 can perform awrite operation to store information in memory cells 102, and a readoperation to read (e.g., sense) information (e.g., previously storedinformation) in memory cells 102. Memory device 100 can also perform anoperation (e.g., a refresh operation) to refresh (e.g., to keep valid)the value of information stored in memory cells 102. Each of memorycells 102 can be configured to store information that can represent abinary 0 (“0”) or a binary 1 (“1”).

Memory device 100 can receive a supply voltage, including supplyvoltages VDD and V_(SS), on lines 130 and 132, respectively. Supplyvoltage V_(SS) can operate at a ground potential (e.g., having a valueof approximately zero volts). Supply voltage VDD can include an externalvoltage supplied to memory device 100 from an external power source suchas a battery or an alternating current to direct current (AC-DC)converter circuitry.

As shown in FIG. 1, memory device 100 can include a memory control unit118 to control memory operations (e.g., read and write operations) ofmemory device 100 based on control signals on lines (e.g., controllines) 120. Examples of signals on lines 120 include a row access strobesignal RAS*, a column access strobe signal CAS*, a write-enable signalWE*, a chip select signal CS*, a clock signal CK, and a clock-enablesignal CKE. These signals can be part of signals provided to a dynamicrandom access memory (DRAM) device.

As shown in FIG. 1, memory device 100 can include lines (e.g., globaldata lines) 112 that can carry signals DQ0 through DQN. In a readoperation, the value (e.g., logic 0 and logic 1) of information (readfrom memory cells 102) provided to lines 112 (in the form signals DQ0through DQN) can be based on the values of signals DL₀ and DL₀* throughDL_(N) and DL_(N)* on data lines 105. In a write operation, the value(e.g., “0” (binary 0) or “1” (binary 1)) of the information provided todata lines 105 (to be stored in memory cells 102) can be based on thevalues of signals DQ0 through DQN on lines 112.

Memory device 100 can include sensing circuitry 103, select circuitry115, and input/output (I/O) circuitry 116. Column access circuitry 109can selectively activate signals on lines (e.g., select lines) based onaddress signals ADDR. Select circuitry 115 can respond to the signals onlines 114 to select signals on data lines 105. The signals on data lines105 can represent the values of information to be stored in memory cells102 (e.g., during a write operation) or the values of information read(e.g., sensed) from memory cells 102 (e.g., during a read operation).

I/O circuitry 116 can operate to provide information read from memorycells 102 to lines 112 (e.g., during a read operation) and to provideinformation from lines 112 (e.g., provided by an external device) todata lines 105 to be stored in memory cells 102 (e.g., during a writeoperation). Lines 112 can include nodes within memory device 100 or pins(or solder balls) on a package where memory device 100 can reside. Otherdevices external to memory device 100 (e.g., a memory controller or aprocessor) can communicate with memory device 100 through lines 107,112, and 120.

Memory device 100 may include other components, which are not shown tohelp focus on the embodiments described herein. Memory device 100 can beconfigured to include at least a portion of the memory device withassociated structures and operations described below with reference toFIG. 2A through FIG. 6.

One of ordinary skill in the art may recognize that memory device 100may include other components, several of which are not shown in FIG. 1so as not to obscure the example embodiments described herein. At leasta portion of memory device 100 (e.g., a portion of memory array 101) caninclude structures similar to or identical to any of the memory devicesdescribed below with reference to FIG. 2A through FIG. 6.

FIG. 2A shows a schematic diagram of a portion of a memory device 200including a memory array 201, according to some embodiments describedherein. Memory device 200 can correspond to memory device 100 of FIG. 1.For example, memory array 201 can form part of memory array 101 of FIG.1.

As shown in FIG. 2A, memory device 200 can include memory cells 210through 217, which are volatile memory cells (e.g., DRAM cells). Each ofmemory cells 210 through 217 can include two transistors T1 and T2 andone capacitor 202, such that each of memory cells 210 through 217 can becalled a 2T1C memory cell. For simplicity, the same labels T1 and T2 aregiven to the transistors of different memory cells among memory cells210 through 217, and the same label (i.e., 202) is given to thecapacitor of different memory cells among memory cells 210 through 217.

Memory cells 210 through 217 can be arranged in memory cell groups(e.g., strings) 201 ₀ and 201 ₁. Each of memory cell groups 201 ₀ and201 ₁ can include the same number of memory cells. For example, memorycell group 201 ₀ can include four memory cells 210, 211, 212, and 213,and memory cell group 201 ₁ can include four memory cells 214, 215, 216,and 217. FIG. 2A shows four memory cells in each of memory cell groups201 ₀ and 201 ₁ as an example. The number of memory cells in memory cellgroups 201 ₀ and 201 ₁ can be different from four.

FIG. 2A shows directions x, y, and z that can correspond to thedirections x, y, and z directions of the structure (physical structure)of memory device 200 shown in FIG. 2D through FIG. 2I. As described inmore detail below with reference to FIG. 2D through FIG. 2I, the memorycells in each of memory cell groups 201 ₀ and 201 ₁ can be formedvertically (e.g., stacked over each other in a vertical stack in thez-direction) over a substrate of memory device 200.

Memory device 200 (FIG. 2A) can perform a write operation to storeinformation in memory cells 210 through 217, and a read operation toread (e.g., sense) information from memory cells 210 through 217. Eachof memory cells 210 through 217 can be randomly selected during a reador write operation. During a write operation of memory device 200,information can be stored in the selected memory cell (or memory cells).During a read operation of memory device 200, information can be readfrom the selected memory cell (or memory cells).

As shown in FIG. 2A, memory device 200 can include decoupling components(e.g., isolation components) 281 through 286, which are not memorycells. A particular decoupling component among decoupling components 281through 286 can stop a flow of current from going across that particulardecoupling component (described in more detail below). In the physicalstructure of memory device 200, each of the decoupling components 281through 286 can be a component (e.g., a transistor) that is permanentlyturned off (e.g., always placed in a turned-off state). Alternatively,each of the decoupling components 281 through 286 can be a dielectricmaterial (e.g., silicon oxide) that can prevent a conduction of currentthrough it.

As shown in FIG. 2A, memory device 200 can include a read data line(e.g., read bit line) 220 that can be shared by memory cell groups 201 ₀and 201 ₁. Memory device 200 can include a common conductive line 290coupled to memory cell groups 201 ₀ and 201 ₁. Common conductive line290 can be coupled to ground during an operation (e.g., read or writeoperation) of memory device 200.

Read data line 220 can carry a signal (e.g., read data line signal)BL_R₀. During a read operation of memory device 200, the value (e.g.,current or voltage value) of signal BL_R₀ can be used to determine thevalue (e.g., “0” or “1”) of information read (e.g., sensed) from aselected memory cell. The selected memory cell can be either from memorycell group 201 ₀ or memory cell group 201 ₁. During a read operation ofmemory device 200, the memory cells of memory cell group 201 ₀ andmemory cell group 201 ₁ can be selected one at a time to provideinformation read from the selected memory cell.

Memory device 200 can include separate plate lines 250 through 257.Plate lines 250, 251, 252, and 253 can carry signals PL0 ₀, PL0 ₁, PL0₂, and PL0 ₃, respectively. Plate lines 254, 255, 256, and 257 can carrysignals PL1 ₀, PL1 ₁, PL1 ₂, and PL1 ₃, respectively.

During a read operation of memory device 200, signals PL0 ₀, PL0 ₁, PL0₂, and PL0 ₃ on corresponding plate lines 250 through 253 can beprovided with different voltages. Depending on the value of informationstored in a selected memory cell, an amount (e.g., a predeterminedamount) of current may or may not flow between read data line 220 andcommon conductive line 290 through memory cells 210, 211, 212, and 213.Based on the presence or absence of such an amount of current, memorydevice 200 can determine (e.g., by using a detection circuit (not shownin FIG. 2A)) the value (e.g., “0” or “1”) of information stored in theselected memory cell.

As shown in FIG. 2A, memory device 200 can include read select lines 260and 261 coupled to memory cell groups 201 ₀ and 201 ₁, respectively.Read select lines 260 and 261 can carry signals (e.g., read selectsignals) RSL0 and RSL1, respectively. During a read operation of memorydevice 200, read select signals RSL0 and RSL1 can be selectivelyactivated to couple a corresponding memory cell group (201 ₀ or 201 ₁)to read data line 220.

Memory device 200 can include select transistors 270 and 271 that can becontrolled (e.g., turned on or turned off) by signals RSL0 and RSL1,respectively. Memory cell groups 201 ₀ and 201 ₁ can be selected one ata time during a read operation to read information from memory cells 210through 217. For example, during a read operation, signal RSL0 can beactivated (e.g., provided with a positive voltage) to turn on selecttransistor 270 and coupled to memory cell group 201 ₀ to read data line220 if one of memory cells 210, 211, 212, and 213 is selected. In thisexample, signal RSL1 can be deactivated (e.g., provided with zero volts)to turn off select transistor 271 when signal RSL0 is activated, so thatmemory cell group 201 ₁ is not coupled to read data line 220. In anotherexample, during a read operation, signal RSL1 can be activated (e.g.,provided with a positive voltage) to turn on select transistor 271 andcouple to memory cell group 201 ₁ to read data line 220 if one of memorycells 214, 215, 216, and 217 is selected. In this example, signal RSL0can be deactivated (e.g., provided with zero volts) when signal RSL1 isactivated, so that memory cell group 201 ₀ is not coupled to read dataline 220.

Memory device 200 can include write data lines (write bit lines) 231 and232 that can be shared by memory cell groups 201 ₀ and 201 ₁. Write datalines 231 and 232 can carry signals BL_W_(A) and BL_W_(B), respectively.During a write operation of memory device 200, signals BL_W_(A) andBL_W_(B) can be provided with voltages that can have values based on thevalue (e.g., “0” or “1”) of information to be stored in a selectedmemory cell (or memory cells). Two memory cells within a group can sharea write data line. For example, memory cells 210 and 211 can share writedata line 231, and memory cells 212 and 213 can share write data line232. In another example, memory cells 214 and 215 can share write dataline 231, and memory cells 216 and 217 can share write data line 232.

Memory device 200 can include write word lines 240 through 247 (whichcan be part of the access lines of memory device 200). Write word lines240, 241, 242, and 243 can carry signals WWL0 ₀, WWL0 ₁, WWL0 ₂, andWWL0 ₃, respectively. Write word lines 244, 245, 246, and 247 can carrysignals WWL1 ₀, WWL1 ₁, WWL1 ₂, and WWL1 ₃, respectively.

During a write operation of memory device 200, write word lines 240,241, 242, and 243 (associated with memory cell group 201 ₀) can be usedto provide access to memory cells 210, 211, 212, and 213, respectively,in order to store information in the selected memory cell (or memorycells) in memory cell group 201 ₀.

During a write operation of memory device 200, write word lines 244,245, 246, and 247 (associated with memory cell group 201 ₁) can be usedto provide access to memory cells 214, 215, 216, and 217, respectively,in order to store information in the selected memory cell (or memorycells) in memory cell group 201 ₁

Information stored in a particular memory cell (among memory cells 210through 217) of memory device 200 can be based on the presence orabsence of an amount (e.g., a predetermined amount) of charge in acapacitor 202 of that particular memory cell. The amount of chargeplaced on the capacitor 202 of a particular memory cell can be based onthe value of voltages provided to signals BL_W_(A) and BL_W_(B) during awrite operation. During a read operation to read information from aselected memory cell, the presence or absence of an amount of currentbetween read data line 220 and common conductive line 290 is based onthe presence or absence of an amount of charge in capacitor 202 of theselected memory cell.

FIG. 2A shows read data line 220 and write data lines 231 and 232 sharedby two memory cell groups (e.g., 201 ₀ and 201 ₁) as an example.However, read data line 220 and write data lines 231 and 232 can beshared by other memory cell groups (not shown) of memory device 200 thatare similar to memory cell groups 201 ₀ and 201 ₁ (e.g., memory cellgroups in the y-direction).

Write word lines 240, 241, 242, and 243 can be shared by other memorycell groups (not shown) in the x-direction of memory device 200. Platelines 250, 251, 252, and 253 can be shared by other memory cell groups(not shown) in the x-direction of memory device 200.

As shown in FIG. 2A, two memory cells (e.g., 212 and 213) of a samememory cell group (e.g., 201 ₀) can share a write data line (e.g., 232).Thus, the number of write data lines (e.g., two date lines in FIG. 2A)can be one half of the number of memory cells (e.g., four memory cellsin FIG. 2A) in each memory cell group. For example, if each memory cellgroup in FIG. 2A has six memory cells, then memory device 200 caninclude three write data lines (similar to write data lines 231 and 232)shared by respective pairs of the six memory cells.

As shown in FIG. 2A, memory device 200 can include other elements, suchas read data line 221 (and corresponding signal BL_R_(N)), read selectlines 262 and 263 (and corresponding signals RSL2 and RSL3), and selecttransistors 272 and 273. Such other elements are similar to thosedescribed above. Thus, for simplicity, detailed description of suchother elements of memory device 200 is omitted from the descriptionherein.

FIG. 2B shows a schematic diagram of a portion of the memory device 200of FIG. 2A including memory cell group 201 ₀. As shown in FIG. 2B, thecapacitor 202 can include capacitor plates (e.g., terminals) 202 a and202 b. Capacitor plate 202 a can form part of (or can be the same as) astorage node (e.g., a memory element) of a corresponding memory cell ofmemory device 200. Capacitor plate 202 a of a particular memory cell canhold a charge that can be used to represent the value (e.g., “0” or “1”)of information stored in that particular memory cell. Capacitor plate202 a can be coupled to a terminal (e.g., source or drain) of transistorT2 through a conductive connection 203.

Capacitor plate 202 b of capacitor 202 can also be the gate oftransistor T1 of a corresponding memory cell. Thus, capacitor plate 202b of capacitor 202 and the gate of transistor T1 are the same element.The combination of capacitor 202 and transistor T1 can also be called astorage capacitor-transistor (e.g., a gain cell). During a writeoperation to store information in the memory (e.g., memory cell 213),the storage capacitor-transistor of memory device 200 can allow arelatively small amount of charge to be stored in capacitor plate 202 ato represent the value (e.g., “1”) of information stored in the memory.The relatively small amount of charge can allow the size of a memorycell of memory device 200 to be relatively small. During a readoperation of reading information from the memory cell, the storagecapacitor-transistor combination can operate to amplify the charge(e.g., current). Since the amount of charge is relatively small, theamplification (e.g., gain) of the charge can improve accuracy of theinformation read from the memory cell of memory device 200.

During a write operation of storing information in a selected memorycell (e.g., memory cell 213), charge can be provided to (or not providedto) capacitor plate 202 a of the selected memory cell (e.g., memory cell213), depending on the value of information to be stored in thatselected memory cell. For example, if “0” (binary 0) is to be stored inmemory cell 213 (selected memory cell), then charge may not be providedto capacitor plate 202 a. In this example, signal BL_W_(B) on write dataline 232 can be provided with zero volts (or alternatively a negativevoltage), transistor T2 of memory cell 213 can be turned on, andtransistor T2 of memory cell 212 can be turned off. In another example,if “1” (binary 1) is to be stored in memory cell 213 (selected memorycell), then an amount (e.g., predetermined amount) of charge can beprovided to capacitor plate 202 a of memory cell 213. In this example,signal BL_W_(B) on write data line 232 can be provided with a positivevoltage, transistor T2 of memory cell 213 can be turned on, andtransistor T2 of memory cell 212 can be turned off.

During a read operation of reading (e.g., sensing) informationpreviously stored in a selected memory cell (e.g., memory cell 212) of amemory cell group (e.g., 201 ₀), a voltage (e.g., V1>0) can be appliedto the gates of transistors T1 of unselected memory cells (e.g., memorycell 210, 211, and 213) of that memory cell group, such that transistorsT1 of the unselected memory cells are turned on regardless of the valueof information stored in the selected memory cells. Another voltage(e.g., V0<V1) can be provided to the gate of transistor T1 of theselected memory cell. Transistor T1 of the memory cell may turn on ormay remain turned off, depending on the value (e.g., “0” or “1”)previously stored in the selected memory cell.

During the read operation, signal BL_R₀ on read data line 220 can havedifferent values depending on the state (e.g., turned-on or turned-off)of transistor T1 of the selected memory cell. Memory device 200 candetect different values of signal BL_R₀ to determine the value ofinformation stored in the selected memory cell. For example, in FIG. 2B,if memory cell 212 is selected to be read, then a voltage (e.g., zerovolts) can be provided to signal PL0 ₂ (which controls the gate oftransistor T1 of memory cell 212), and a voltage V1 can be applied tothe gates of transistors T1 memory cell 210, 211, and 213. In thisexample, depending on the value (e.g., binary 0 or binary 1) previouslystored in memory cell 212, transistor T1 of memory cell 213 may turn onor may remain turned off. Memory device 200 can detect the differentvalues of signal BL_R₀ to determine the value of information stored inmemory cell 212.

FIG. 2C is a chart showing example values of voltages provided to thesignals of memory device 200 of FIG. 2B, during example write and readoperations of memory device 200, according to some embodiments describedherein. The signals in FIG. 2C (WWL0 ₀ through WWL0 ₃, PL0 ₀ through PL0₃, BL_W_(A), BL_W_(B), RSL0, and BL_R₀) are the same as those shown inFIG. 2B. As shown in FIG. 2C, in each of the write and read operations,the signals can be provided with voltages having specific values (involt unit), depending upon which memory cell among memory cells 210,211, 212, and 213 is selected. In FIG. 2C, memory cell 212 (shown inFIG. 2B) is assumed to be a selected (target) memory cell during a writeoperation and a read operation, and memory cells 210, 211, and 213 arenot selected (unselected). The following description refers to FIG. 2Band FIG. 2C.

During a write operation of memory device 200 (FIG. 2C), signal WWL0 ₂(associated with selected memory cell 212) can be provided with avoltage V1 (positive voltage), such as WWL0 ₂=V1, in order to turn ontransistor T2 of memory cell 212. As an example, the value of voltage V1can be greater than the supply voltage (e.g., VDD). Signals WWL0 ₀, WWL0₁, and WWL0 ₃ (associated with unselected memory cells 210, 211, and213, respectively) can be provided with a voltage V0 (e.g.,substantially equal to VDD), such as WWL0 ₀=WWL0 ₁=WWL0 ₃=V0, in orderto turn off transistors T2 of memory cells 210, 211, and 213.Information (e.g., “0” or “1”) can be stored in memory cell 212 (throughthe turned-on transistor T2 of memory cell 212) by way of providing avoltage V_(BL) _(_) _(W) to signal BL_W_(B). The value of voltage V_(BL)_(_) _(W) can be based on the value of information to be stored inmemory cell 212. For example, voltage V_(BL) _(_) _(W) can have onevalue (e.g., V_(BL) _(_) _(W)=0V or V_(BL) _(_) _(W)<0V) if “0” is to bestored in memory cell 212, and voltage V_(BL) _(_) _(W) can have anothervalue (e.g., V_(BL) _(_) _(W)>0V (e.g., or V_(BL) _(_) _(W)=1V) if “1”is to be stored in memory cell 212.

Other signals of memory device 200 during a write operation can beprovided with voltages as shown in FIG. 2C. For example, each of signalsPL0 ₀, PL0 ₁, PL0 ₂, and PL0 ₃ (associated with both selected andunselected memory cells) can be provided with voltage V0, and each ofsignals BL_W_(A), RSL0, and BL_R₀ can be provided with voltage V0.

The values of the voltages applied to the signals of FIG. 2C during awrite operation can be used for any selected memory cell of memory cellgroup 201 ₀ (FIG. 2B). For example, if memory cell 213 is selected(memory cells 210, 211, and 212 are unselected) during a writeoperation, then the values of voltages provided to signals WWL0 ₂ andWWL0 ₃ in FIG. 2C can be swapped (e.g., WWL0 ₂=V0, and WWL0 ₃=V1), andother signals can remain at the values shown in FIG. 2C.

In another example, if memory cell 210 is selected (memory cells 211,212, and 213 are unselected) during a write operation, the values ofvoltages provided to signals WWL0 ₀ and WWL0 ₂ in FIG. 2C can be swapped(e.g., WWL0 ₀=V1, and WWL0 ₂=V0), the values of voltages provided toBL_W_(A) and BL_W_(B) in FIG. 2C can be swapped (e.g., BL_W_(B)=V_(BL)_(_) _(W), and BL_W_(A)=V0), and other signals can remain at the valuesshown in FIG. 2C.

In another example, if memory cell 211 is selected (memory cells 210,212, and 213 are unselected) during a write operation, the values ofvoltages provided to signals WWL0 ₁ and WWL0 ₂ in FIG. 2C can be swapped(e.g., WWL0 ₁=V1, and WWL0 ₂=V0), the values of voltages provided toBL_W_(A) and BL_W_(B) in FIG. 2C can be swapped (e.g., BL_W_(B)=V_(BL)_(_) _(W), and BL_W_(A)=V0), and other signals can remain at the valuesshown in FIG. 2C.

As shown in FIG. 2B, memory cells 210 and 211 can share write data line231, and memory cells 212 and 213 can share write data line 232 (whichis different from data line 231). In this configuration, two memorycells associated with different write data lines can be concurrently(e.g., simultaneously) selected during the same write operation to store(e.g., concurrently store) information in the two selected memory cells.For example, in a write operation, memory cells 210 and 212 can beconcurrently selected; memory cells 210 and 213 can be concurrentlyselected; memory cells 211 and 212 can be concurrently selected; andmemory cells 211 and 213 can be concurrently selected. As an example, ifmemory cells 210 and 212 are selected (e.g., concurrently selected) in awrite operation, then the values of voltages can be provided, such thatWWL0 ₀=WWL0 ₂=V1 (to turn on transistors T2 of memory cells 210 and212), WWL0 ₁=WWL0 ₃=V0 (to turn on transistors T2 of memory cells 211and 213), and other signals can remain at the values shown in FIG. 2C.In this example, the values of information to be stored in selectedmemory cells 210 and 212 can be the same (e.g., by providing the samevoltage to signals BL_W_(A) and BL_W_(B)) or can be different (e.g., byproviding different voltages to signals BL_W_(A) and BL_W_(B)).

The following description discusses an example read operation of memorydevice 200 of FIG. 2B. As assumed above, during a read operation, memorycell 212 (FIG. 2B) is a selected memory cell and memory cells 210, 211,and 213 are unselected memory cells. In the description herein, specificvalues for the voltages are used as an example. However, the voltagescan have different values. During a read operation (FIG. 2C), signalsWWL0 ₀, WWL0 ₁, WWL0 ₂, and WWL0 ₃ can be provided with a voltage V0(e.g., WWL0 ₀=WWL0 ₁=WWL0 ₂=WWL0 ₃=V0) because transistors T2 of memorycells 210, 211, 212, and 213 can remain turned off (or may not need tobe turned on) in a read operation. Signal PL0 ₂ (associated withselected memory cell 212) can be provided with a voltage V0. Signals PL0₀, PL0 ₁, and PL0 ₃ (associated with unselected memory cell 210, 211,and 213, respectively) can be provided with a voltage V2, such as PL0₀=PL0 ₁=PL0 ₃=V2. As an example, the value of voltage V2 can besubstantially equal to VDD.

Other signals of memory device 200 during a read operation can beprovided with voltages as shown in FIG. 2C. For example, signal RSL0 canbe provided with a voltage V2 (to turn on select transistor 270), andeach of signals BL_W_(A) and BL_W_(B) can be provided with voltage V0.

Based on the applied voltage V2 shown in FIG. 2C, transistor T1 ofmemory cells 210, 211, and 213 can turn on (regardless of (e.g.,independent of) the value of information stored in memory cells 210,211, and 213). Based on the applied voltage V0, transistor T1 of memorycell 212 may turn on or may remain turned off (may not turn on). Forexample, transistor T1 of memory cell 212 may turn on if the informationstored in memory cell 212 is “0” and turn off (or remain turned off) ifthe information stored in memory cell 212 is “1”. If transistor T1 ofmemory cell 212 is turned on, an amount of current may flow on a currentpath between read data line 220 and common conductive line 290 (throughthe turned-on transistors T1 of each of memory cells 210, 211, 212, and213). If transistor T1 of memory cell 212 remains turned off (or isturned off), an amount of current may not flow between read data line220 and common conductive line 290 (e.g., because no conductive path mayform through transistor T1 of memory cell 212, which is turned off).

In FIG. 2C, signal BL_R₀ can have a voltage V_(BL) _(_) _(R). The valueof voltage V_(BL) _(_) _(W) can be based on the presence or absence ofcurrent (e.g., an amount of current) flowing between read data line 220and common conductive line 290 (presence or absence of current is basedon the value of information stored in memory cell 212). For example, thevalue of voltage V_(BL) _(_) _(W) can be 0<V_(BL) _(_) _(R)<1V (or0<V_(BL) _(_) _(R)=1), if information stored in memory cell 212 is “1”,and the value of voltage V_(BL) _(_) _(W) can be V_(BL) _(_) _(R)=0 ifinformation stored in memory cell 212 is “0”. Based on the value ofvoltage V_(BL) _(_) _(W) associated with signal BL_R₀, memory device 200can determine the value of information stored in memory cell 212 duringthis example read operation.

The description above assumes memory cell 212 is a selected memory cellduring a read operation. The values of the signals in the chart shown inFIG. 2C can be similar if other memory cells (210, 211, and 213) ofmemory device are selected. For example, if memory cell 210 is selected,signals PL0 ₀, PL0 ₁, PL0 ₂, and PL0 ₃ can be provided with voltages V0,V2, V2, and V2, respectively; if memory cell 211 is selected, signalsPL0 ₀, PL0 ₁, PL0 ₂, and PL0 ₃ can be provided with voltages V2, V0, V2,and V2, respectively; if memory cell 213 is selected, signals PL0 ₀, PL0₁, PL0 ₂, and PL0 ₃ can be provided with voltages V2, V2, V2, and V0,respectively. In this example, other signals can remain at the valuesshown in FIG. 2C.

The memory cells (e.g., memory cells 210, 211, 212, and 213) of memorydevice 200 can be randomly selected during a write operation or a readoperation. Alternatively, the memory cells (e.g., memory cells 210, 211,212, and 213) of memory device 200 can be sequentially selected during awrite operation, a read operation, or both.

FIG. 2D shows a side view (e.g., cross-sectional view) of a structure ofa portion of memory device 200 schematically shown in FIG. 2B, in whichthe memory cell structure of each of memory cells 210, 211, 212, and 213can include parts from double-pillar, according to some embodimentsdescribed herein. For simplicity, cross-sectional lines (e.g., hatchlines) are omitted from most of the elements shown in the drawingsdescribed herein.

As shown in FIG. 2D, memory device 200 can include a substrate 299 overwhich memory cells 210, 211, 212, and 213 can be formed (e.g., formedvertically) in different levels (physical internal levels) of memorydevice 200 with respect to the z-direction. Substrate 299 can includemonocrystalline (also referred to as single-crystal) semiconductormaterial. For example, substrate 299 can include monocrystalline silicon(also referred to as single-crystal silicon). The monocrystallinesemiconductor material of substrate 299 can include impurities, suchthat substrate 299 can have a specific conductivity type (e.g., n-typeor p-type). Substrate 299 can include circuitry 295 formed in substrate299. Circuitry 295 can include sense amplifiers (that can be similar tosensing circuitry 103 of FIG. 1), decoder circuitry (that can be similarto row and column access circuitry 108 and 109 of FIG. 1), and othercircuitry of a memory device (e.g., a DRAM device) such as memory device100.

Memory device 200 can include pillars (e.g., semiconductor materialpillars) 301 and 302 having lengths extending in a directionperpendicular to (e.g., outwardly from) substrate 299 in thez-direction. The z-direction can be a vertical direction of memorydevice 200, which is a direction between common conductive line 290 andread data line 220. As shown FIG. 2D, pillars 301 and 302 are parallelwith each other in the z-direction. As described in more detail below,each of memory cells 210, 211, 212, and 213 has a memory cell structurethat includes parts of both pillars (double-pillar) 301 and 302.

In FIG. 2D, portions labeled “n+” can be n-type semiconductor materialportions (n-type semiconductor material regions). The material of the n+portions include semiconductor material (e.g., silicon) that can bedoped (e.g., implanted) with dopants (e.g., impurities), such that then+ portions are conductively doped portions (doped regions) that canconduct current. Portions labeled “P_Si” can be semiconductor material(e.g., silicon) and have a different type (e.g., conductivity type) fromthe n+ portions. Portions P_Si can be p-type semiconductor material(p-type semiconductor material regions). For example, portions P_Si canbe p-type polysilicon portions. As described below, when a voltage isapplied to a conductive element (e.g., a write word line) adjacent aparticular portion P_Si, a channel (e.g., a conductive path) can beformed in a particular portion P_Si and electrically connect thatparticular P_Si portion with two n+ portions adjacent that particularportion P_Si.

As shown in FIG. 2D, each of pillars 301 and 302 can include differentsegments, in which each of the segments can include an n+ portion, aP_Si portion, or a combination of an n+ portion and a P_Si portion. Forexample, as shown in FIG. 2D, pillar 301 can have a segment thatincludes a portion 301 a (n+ portion) and a portion 301 d (P_Si portion)adjacent the structure (e.g., the material) of capacitor plate 202 a ofmemory cell 213. In another example, pillar 301 can have a segment thatincludes a portion 301 c (n+ portion) and a portion 301 e (P_Si portion)adjacent the structure (e.g., the material) of capacitor plate 202 a ofmemory cell 212. In a further example, pillar 301 can have segment thatincludes a portion 301 b (n+ portion) adjacent portion 301 d (P_Siportion). FIG. 2D also shows pillar 302 having portions 302 a, 302 b,302 c (n+ portions), 302 d and 302 e (P_Si portions) included inrespective segments of pillar 302.

Each of transistors T1 can include parts of a combination of aparticular portion P_Si of pillar 301 and two n+ portions of pillar 301adjacent that particular P_Si portion. For example, portion 301 d (P_Siportion) and portions 301 a and 301 b (n+ portions) can form parts ofthe body, source, and drain, respectively, of transistor T1 of memorycell 213. In another example, portion 301 e (P_Si portion) and portions301 b and 301 c (n+ portions) can form parts of the body, source, anddrain, respectively, of transistor T1 of memory cell 212.

Each of transistors T2 can include a combination of parts of aparticular portion P_Si of pillar 302 and two n+ portions of pillar 302adjacent that particular P_Si portion. For example, portion 302 d (P_Siportion) and portions 302 a and 302 b (n+ portions) can form parts ofthe body, source, and drain, respectively, of transistor T2 of memorycell 213. In another example, portion 302 e (P_Si portion) and portions302 b and 302 c (n+ portions) can form parts of the body, source, anddrain, respectively, of transistor T2 of memory cell 212.

As shown in FIG. 2D, memory cell structures of memory cells 212 and 213can include conductive material 312 and 313, respectively. Examples ofeach of conductive materials 312 and 313 include polysilicon (e.g.,conductively doped polysilicon), metals, or other conductive materials.

Conductive material 312 can include a portion that forms part ofcapacitor plate 202 a of memory cell 212, a portion that contacts (e.g.,electrically connected to (which is directly coupled to)) portion 302 a(n+ portion) of pillar 302, and a portion that forms part of conductiveconnection 203 of memory cell 212.

Conductive material 313 can include a portion that forms part ofcapacitor plate 202 a of memory cell 213, a portion that contacts (e.g.,electrically connected to) portion 302 b (n+ portion) of pillar 302, anda portion that forms part of conductive connection 203 of memory cell213.

The memory cell structure of each of memory cells 210 and 211 is similarto the memory cell structures of memory cells 212 and 213, as shown inFIG. 2D. For simplicity, detailed description of the memory cellstructures of memory cells 210 and 211 is omitted from the descriptionof FIG. 2D.

As shown in FIG. 2D, memory device 200 can include a dielectric (e.g.,dielectric material) 304 that can extend continuously along the lengthand a sidewall of pillar 301. Capacitor plate 202 a of each of memorycells 210, 211, 212, and 213 can be separated (e.g., electricallyisolated) from pillar 301 by dielectric 304.

Memory device 200 can include dielectrics (e.g., dielectric materials)305. Capacitor plate 202 a of each of memory cells 210, 211, 212, and213 can be separated (e.g., electrically isolated) from a respectiveplate line (among plate lines 250, 251, 252, and 253) by one ofdielectrics 305.

Memory device 200 can include dielectrics (e.g., dielectric materials)306 and 307 located at respective locations (adjacent respectivesegment) of pillar 302, as shown in FIG. 2D. Each of write word lines240, 241, 242, and 243 can be separated (e.g., electrically isolated)from pillar 302 by a respective dielectric among dielectrics 306. Eachof write data line 231 and 232 can contact (e.g., electrically connect)a respective n+ portion of pillar 302. Each of plate lines 250, 251,252, and 253 can be separated (e.g., electrically isolated) from pillar302 by a respective dielectric among dielectrics 307.

Dielectrics 304, 305, 306, and 307 can be formed from the samedielectric material or different dielectric materials. For example,dielectrics 304, 305, 306, and 307 can be formed from silicon dioxide.In another example, dielectrics 304, 306, and 307 can be formed fromsilicon dioxide, and dielectric 305 can be formed from dielectricmaterial having a dielectric constant greater than the dielectricconstant of silicon dioxide.

As shown in FIG. 2D, each of read select lines 260, write word lines 240through 243, and plate lines 250 through 253 can have a length in thex-direction, which is perpendicular to the z-dimension. Each of readdata line 220 and write data lines 231 and 232 can have length in they-direction (not shown), which is perpendicular to the x-dimension.

Common conductive line 290 can include a conductive material (e.g., aconductive region) and can be formed over a portion of substrate 299(e.g., by depositing a conductive material over substrate 299).Alternatively, common conductive line 290 can be formed in or formed ona portion of substrate 299 (e.g., by doping a portion of substrate 299).

Memory device 200 can include a conductive portion 293, which caninclude conductively doped polysilicon, metals, or other conductivematerials. Conductive portion 293 can be coupled to ground (not shown).Although common conductive line 290 can be coupled to ground, connectingpillar 301 to ground through conductive portion 293 may further improvea conductive path (e.g., current path) between read data line 220 andground during read operation of memory device 200.

As shown in FIG. 2D, each of decoupling components 281, 282, and 283 caninclude a P_Si portion of pillar 302, a portion of one of dielectrics307, and a portion of a conductive line among conductive lines 281 a,282 a, and 283 a. Examples of conductive lines 281 a, 282 a, and 283 ainclude conductively doped polysilicon, metals, or other conductivematerials. Decoupling components 281, 282, and 283 are in a “turned-off”state (e.g., permanently turned off (always off)) during operations(e.g., write and read operations) of memory device 200.

As mentioned above with reference to FIG. 2A, each of decouplingcomponents 281 through 286 can be permanently placed in a turned-offstate. The turned-off state of each of decoupling components 281, 282,and 283 can prevent current (e.g., stop current) from flowing from onelocation to another location across each of decoupling components 281,282, and 283. This can create an electrical separation between elementsassociated with pillar 302 where current is undesirable to be flownbetween such elements. For example, decoupling component 282 in FIG. 2Dcan create an electrical separation between write data lines 231 and232. This separation prevents information intended for storing in aselected memory cell from being stored in an unselected memory cell. Forexample, decoupling component 282 can prevent information from writedata line 231 intended to be stored in selected memory cell 211 frombeing stored in an unselected memory cell 212, and prevent informationfrom write data line 232 intended to be stored in selected memory cell212 from being stored in an unselected memory cell 211.

In an alternative structure of memory device 200, decoupling components281, 282, and 283 can have structures different from their structuresshown in FIG. 2D as long as each of decoupling components 281, 282, and283 can be an electrical isolation component. For example, in such analternative structure, each of decoupling components 281, 282, and 283can include a dielectric material in a respective portion of pillar 302.In this example, each of portions 302 f, 302 g, and 302 h can be adielectric portion (e.g., a silicon oxide portion).

In FIG. 2D, each of read data line 220, write data lines 231 and 232,read select line 260, write word lines 240 through 243, plate lines 250through 253, and capacitor plates 202 a can be formed form a conductivematerial (or a combination of conductive materials). Examples of such aconductive material include polysilicon (e.g., conductively dopedpolysilicon), metals, or other conductive materials.

As shown in FIG. 2D, conductive material 313, and other elements (e.g.,plate lines, write word lines, and write data lines), can be locatedalong respective segments of pillars 301 and 302, as shown in FIG. 2D.For example, conductive material 313 can include a portion (the portionthat forms part of capacitor plate 202 a of memory cell 213) locatedalong the segment of pillar 301 that includes portions 301 a and 301 d.Conductive material 313 can also include a portion that contacts portion302 a (n+ portion) of pillar 302. In another example, conductivematerial 312 can include a portion (the portion that forms part ofcapacitor plate 202 a of memory cell 212) located along the segment ofpillar 301 that includes portions 301 c and 301 e. Conductive material312 can also include a portion that contacts portion 302 c (n+ portion)of pillar 302. The conductive materials of plate lines 250 through 253,write word lines 240 through 243, and write data lines 231 and 232 canbe located along respective segments of pillar 301 and 302, as shown inFIG. 2D.

In FIG. 2D, lines 2E, 2F, 2G, 2H, and 2I are sectional lines. Asdescribed below, some portions (e.g., partial top views) of memorydevice 200 taken from lines 2E, 2F, 2G, 2H, and 2I are shown in FIG. 2E,FIG. 2F, FIG. 2G, FIG. 2H, and FIG. 2I, respectively.

FIG. 2E shows a portion (e.g., partial top view) of memory device 200including some elements viewed from line 2E of FIG. 2D down to substrate299 of FIG. 2D, according to some embodiments described herein. Forsimplicity, detailed description of the same elements shown in FIG. 2Athrough FIG. 2D (and other figures described below) are not repeated.

For purposes of illustrating relative locations of some of the elementsof memory device 200 (e.g., memory cells 213 and 217), FIG. 2E shows thelocations for some elements of memory device 200 that are schematicallyshown in FIG. 2C but not structurally shown in FIG. 2D. For example,FIG. 2E shows memory cell 217 (FIG. 2A), read select line 261 (FIG. 2C),plate line 257 (FIG. 2C) and write word line 247 (FIG. 2C) that areschematically shown in FIG. 2C but not structurally shown in FIG. 2D. Inanother example, FIG. 2E shows an X-decoder and a Y-decoder that are notshown in FIG. 2D. The X-decoder and the Y-decoder in FIG. 2E can be partof circuitry 295 in substrate 299 in FIG. 2D of memory device 200. TheX-decoder and the Y-decoder (FIG. 2E) can be part of respective row andcolumn access circuitry of memory device 200.

As shown in FIG. 2E, each of read select line 260, plate line 253(located below (underneath) read select line 260 with respect to thez-direction), and write word line 243 (located below (underneath) plateline 253 in the z-direction) can have a length extending in thex-direction. FIG. 2E does not show write word lines 242, 241, and 240(FIG. 2D), which are located below write word line 243.

Similarly, in FIG. 2E, each of read select line 261, plate line 257(located below read select line 261 with respect to the z-direction),and write word line 247 (located below plate line 257 with respect tothe z-direction) can have a length extending in the x-direction. FIG. 2Edoes not show write word lines 244, 245, and 246 (FIG. 2A), which arelocated below write word line 247.

As shown in FIG. 2E, each of read data line 220, write data line 232,and write data line 231 (located below write data line 232 in thez-direction) can have a length extending in the y-direction.

FIG. 2F shows a portion (e.g., partial top view) of memory device 200including some elements viewed from line 2F of FIG. 2D down to substrate299 of FIG. 2D, according to some embodiments described herein. As shownin FIG. 2F, portion 301 a (which is a segment of pillar 301 thatincludes n+ portion) can include a sidewall 301 a′ (e.g., circularsidewall). Dielectric 304 can include a sidewall 304′ (e.g., circularsidewall). Capacitor plate 202 a (formed from a portion of conductivematerial 313 in FIG. 2D) can include a sidewall 202 a′ (e.g., circularsidewall). Dielectric 305 can include a sidewall 305′ (e.g., circularsidewall).

Dielectric 304 can include a portion surrounding sidewall 301 a′.Capacitor plate 202 a can include a portion surrounding sidewall 304′ ofdielectric 304. Dielectric 305 can include a portion surroundingsidewall 202 a′ of capacitor plate 202 a. The conductive material ofplate line 253 can include a portion surrounding sidewall 305′ ofdielectric 305.

FIG. 2G shows a portion (e.g., partial top view) of memory device 200including some elements viewed from line 2G of FIG. 2D down to substrate299 of FIG. 2D, according to some embodiments described herein. As shownin FIG. 2G, conductive material 313 can include a portion that formscapacitor plate 202 a, and a portion contacting (e.g., electricallyconnected to) portion 302 a (n+ portion) of pillar 302. Material 313also include a portion that forms part of conductive connection 203.

FIG. 2H shows a portion (e.g., partial top view) of memory device 200including some elements viewed from line 2H of FIG. 2D down to substrate299 of FIG. 2D, according to some embodiments described herein. As shownin FIG. 2H, write word line 243 (which is formed from a conductivematerial) can include a portion separated from portion 301 b of pillar301 by dielectric 304, and a portion separated from portion 302 d ofpillar 302 by a dielectric 306.

FIG. 2I shows a portion (e.g., partial top view) of memory device 200including some elements viewed from line 2I of FIG. 2D down to substrate299 of FIG. 2D, according to some embodiments described herein. As shownin FIG. 2I, decoupling component 280 can include a portion of conductivelines 281 a separated from portion 302 f (P_Si portion) of pillar 302 bydielectric 307. Conductive portion 293 can contact (electricallyconnected to) n+ portion of pillar 301.

As described above with reference to FIG. 2A through FIG. 2I, memorydevice 200 can include memory cells (e.g., 210, 211, 212, and 213)stacked over a substrate (e.g., substrate 299). The memory cells (e.g.,210, 211, 212, and 213) can be grouped into individual memory cellgroups, in which memory device 200 can include multiple (e.g., two)write data lines (e.g., 231 and 232) associated with each memory cellgroup to provide information to be stored in respective memory cellswithin each memory cell group.

In an alternative structure, memory device 200 can have more than twowrite data lines associated with each of memory cell groups 201 ₀ and201 ₁. For example, in such an alternative structure, memory device 200can include four write data lines separately coupled to memory cells210, 211, 212, and 213, such that each of the four write data lines canbe coupled to respective memory cells among memory cells 210, 211, 212,and 213. The four write data lines can be shared between memory cellgroups 201 ₀ and 201 ₁. In the alternative structure (e.g., four writedata lines), memory cell groups 201 ₀ and 201 ₁ can share a read dataline like read data line 220 shown in FIG. 2A.

Memory device 200 can include other variations (e.g., single write dataline associated with each memory cell group). One of such variations isdescribed in detail with reference to FIG. 3A through FIG. 3F.

FIG. 3A shows a schematic diagram of a portion of a memory device 300that can be a variation of memory device 200 of FIG. 2A, according tosome embodiments described herein. Memory device 300 can includeelements that are similar to or identical to the elements of memorydevice 200. For simplicity, similar or identical elements between memorydevices 200 and 300 are given the same reference labels.

As shown in FIG. 3A, memory device 300 includes one (e.g., only asingle) write data line (e.g., write data line 330) for each of memorycell groups 201 ₀ and 201 ₁. As a comparison, memory device 200 includesmore than one write data line (e.g., two write data lines 231 and 232)for each of memory cell groups 201 ₀ and 201 ₁. In FIG. 3A, write dataline 330 can carry signal BL_W₀. Write data line 330 can be shared bymemory cell groups 201 ₀ and 201 ₁ of memory device 300.

FIG. 3B shows a schematic diagram of a portion of a memory device 300 ofFIG. 3A including memory cell group 201 ₀. As shown in FIG. 3B, memorycells 210, 211, 212, and 213 can be coupled between write data line 330and common conductive line 290.

Memory device 300 can perform a write operation to store information inmemory cells 210, 211, 212, and 213. The write operation in memorydevice 300 can be a sequential write operation, such that informationcan be sequentially stored in memory cells 210, 211, 212, and 213. Forexample, in the sequential write operation, memory cells 210, 211, 212,and 213 can be selected to store information one at a time in an order(e.g., a sequential order) starting at memory cell 210 and ending atmemory cell 213. In this sequential order, memory cell 210 can be thefirst memory cell of memory cell group 201 ₀ selected to storeinformation, and memory cell 213 can be the last memory cell of memorycell group 201 ₀ selected to store information. This means that memorydevice 300 may store information in memory cell 211 after (e.g., onlyafter) information has been stored in memory cell 210, memory device 300may store information in memory cell 212 after (e.g., only after)information has been stored in memory cells 210 and 211, and memorydevice 300 may store information in memory cell 213 after (e.g., onlyafter) information has been stored in memory cell 210, 211, and 212.

During a write operation of memory device 300, information to be storedin a selected memory cell among memory cells 210, 211, 212, and 213 canbe provided from write data line 330. The value (e.g., “0” or “1”) ofinformation to be stored in the selected memory cell can be based on thevalue of voltage provided to signal BL_W₀.

Memory device 300 can perform a read operation to read (e.g., sense)information from memory cells 210, 211, 212, and 213. The read operationin memory device 300 can be similar to the read operation (e.g., arandom read operation) of memory device 200 of FIG. 2A. For example,during a read operation of memory device 300, information read from aselected memory cell among memory cells 210, 211, 212, and 213 can beprovided to read data line 220. Signal BL_R₀ on read data line 220 canhave different values depending on the value (e.g., binary 0 orbinary 1) stored in the selected memory cell. Memory device 300 candetect the different values of signal BL_R₀ to determine the value ofinformation stored in the selected memory cell.

FIG. 3C is a chart showing example values of voltages provided to thesignals of memory device 300 of FIG. 3B, during example write and readoperations of memory device 300, according to some embodiments describedherein. The signals in FIG. 3C (WWL0 ₀ through WWL0 ₃, PL0 ₀ through PL0₃, BL_W₀, RSL0, and BL_R₀) are the same as those shown in FIG. 3B. Inthe example write and read operation in FIG. 3C, memory cell 210 isassumed to be a selected memory cell, and memory cells 211, 212, and 213are not selected (unselected). As described above with reference to FIG.3B, a write operation in memory device 300 can be a sequential writeoperation. Thus, in the example write operation associated with FIG. 3C,memory cells 211, 212, and 213 may not have information stored in themwhen memory cell 210 is selected to store information. The followingdescription refers to FIG. 3B and FIG. 3C.

As shown in FIG. 3C during a write operation, signals WWL0 ₀, WWL0 ₁,WWL0 ₂, and WWL0 ₃ (associated with memory cells 210, 211, 212, and 213,respectively) can be provided with a voltage V1, such as WWL0 ₀=WWL0₁=WWL0 ₂=WWL0 ₃=V1). Based on the applied voltage V1, transistor T2(FIG. 3B) of memory cells 210, 211, 212, and 213 can turn on.Information from write data line 330 can be stored in memory cell 210(through the turned-on transistor T2 of memory cell 210) and by way ofproviding voltage V_(BL) _(_) _(W) to signal BL_W₀. The value (in voltunit) of voltage V_(BL) _(_) _(W) can be based on the value (e.g., “0 or“1”) of information to be stored in memory cell 210. Other signals ofmemory device 300 during a write operation can be provided with voltagesas shown in FIG. 3C. For example, each of signals PL0 ₀, PL0 ₁, PL0 ₂,and PL0 ₃ can be provided with the same voltage V0, and each of signalRSL0 and BL_R₀ can be also be provided with voltage V0.

During a read operation associated with FIG. 3C (memory cell 210 is theselected memory cell), signals WWL0 ₀, WWL0 ₁, WWL0 ₂, and WWL0 ₃ can beprovided with a voltage V0 (e.g., WWL0 ₀=WWL0 ₁=WWL0 ₂=WWL0 ₃=V0).Signal PL0 ₀ (associated with selected memory cell 210) can be providedwith a voltage V0. Signals PL0 ₁, PL0 ₂, and PL0 ₃ (associated withunselected memory cells 211, 212, and 213, respectively) can be providedwith a voltage V2. Other signals of memory device 300 during a readoperation can be provided with voltages as shown in FIG. 3C. Forexample, signal RSL0 can be provided with a voltage V2 (to turn onselect transistor 270), and signal BL_W₀ can be provided with voltageV0. Signal BL_R₀ can have a voltage V_(BL) _(_) _(R). Based on the valueof voltage V_(BL) _(_) _(R), memory device 300 can determine the valueof information stored in memory cell 210 during a read operationdescribed here.

FIG. 3D is a chart showing example values of voltages provided to thesignals of memory device 300 of FIG. 3B, during example write and readoperations of memory device 300, according to some embodiments describedherein. In the example write and read operation in FIG. 3D, memory cell212 is assumed to be a selected memory cell, and memory cells 210, 211,and 213 are not selected (unselected). As described above with referenceto FIG. 3B, a write operation in memory device 300 can be a sequentialwrite operation. Thus, at the time that memory cell 212 is selected tostore information, other information has been stored in memory cells 210and 211, and no information has been stored in memory cell 213. Thefollowing description refers to FIG. 3B, FIG. 3C, and FIG. 3D.

During a write operation of memory device 300 (FIG. 3C), signals WWL0 ₀and WWL0 ₁ (associated with memory cells 210 and 211, respectively) canbe provided with a voltage V0, such as WWL0 ₀=WWL0 ₁=V0). Signals WWL0 ₂and WWL0 ₃ (associated with memory cells 212 and 213, respectively) canbe provided with a voltage V1, such as WWL0 ₂=WWL0 ₃=V1). Based on theapplied voltage V1, transistors T2 (FIG. 3B) of memory cells 210 and 211can turn off, and transistors T2 of memory cells 212 and 213 can turnon. Information from write data line 330 can be stored in memory cell212 (through the turned-on transistors T2 of memory cells 212 and 213)and by way of providing a voltage V_(BL) _(_) _(W) to signal BL_W₀. Thevalue of voltage V_(BL) _(_) _(W) can be based on the value ofinformation to be stored in memory cell 212. Other signals of memorydevice 300 during a write operation can be provided with voltages asshown in FIG. 3C. For example, each of signals PL0 ₀, PL0 ₁, PL0 ₂, andPL0 ₃ can be provided with voltage V0, and each of signals RSL0 andBL_R₀ can be provided with voltage V0.

During a read operation associated with FIG. 3D (memory cell 212 is theselected memory cell), the signals of memory device 300 shown in FIG. 3Dcan be the same as those shown in FIG. 3C. For simplicity, detailedoperation of the read operation associated with FIG. 3D is not repeatedhere.

FIG. 3E shows a side view (e.g., cross-sectional view) of a structure ofa portion of memory device 300 schematically shown in FIG. 3B, accordingto some embodiments described herein. The structure of memory device 300shown in FIG. 3E includes elements that are similar to or identical tothe structure of the memory device 200 shown in FIG. 2D. For simplicity,similar or identical elements between memory devices 200 (FIG. 2D) and300 (FIG. 3E) are given the same reference labels.

As described above with reference to FIG. 3A, differences between memorydevices 200 and 300 include the number of write data lines coupled tothe memory cell groups of memory device 300. As shown in FIG. 3E, memorydevice 300 includes a single write data line 330 associated with memorycells 210, 211, 212, and 213. Unlike memory device 200 of FIG. 2D,memory device 300 of FIG. 3E can exclude (does not include) decouplingcomponents 282 and 283 (FIG. 2D). In FIG. 3E, line 3F is a sectionalline in which a portion (e.g., a partial top view) of memory device 300can be viewed.

FIG. 3F shows a portion (e.g., partial top view) of memory device 300including some elements viewed from line 3F of FIG. 3E down to substrate299 (FIG. 3E), according to some embodiments described herein. As shownin FIG. 3F, write data line 330 can have a length extending they-direction, which is the same as the direction of the length of readdata line 220. The structures of other elements of memory device 300shown in FIG. 3E are similar to the structure of memory device 200 shownin FIG. 2D through FIG. 2I. Thus, for simplicity, detailed descriptionof other elements of memory device 300 is omitted.

FIG. 4A shows a schematic diagram of a portion of a memory device 400including memory cells, in which the memory cell structure of each ofthe memory cells 410, 411, 412, and 413 can include parts from a singlepillar, according to some embodiments described herein. The memory cellstructure of the memory cells of memory device 400 is described belowwith reference to FIG. 4B through FIG. 4F. As shown in FIG. 4A, memorydevice 400 can include a memory array 401. Memory device 400 cancorrespond to memory device 100 of FIG. 1. For example, memory array 401can form part of memory array 101 of FIG. 1.

As shown in FIG. 4A, memory device 400 can include memory cell groups(e.g., strings) 401 _(A) and 401 _(B). Each of memory cell groups 401_(A) and 401 _(B) can include the same number of memory cells. Forexample, memory cell group 401 _(A) can include four memory cells 410_(A), 411 _(A), 412 _(A), and 413 _(A), and memory cell group 401 _(B)can include four memory cells 410 _(B), 411 _(B), 412 _(B), and 413_(B). FIG. 4A shows four memory cells in each of memory cell groups 401_(A) and 401 _(B) as an example. The memory cells in memory device 400are volatile memory cells (e.g., DRAM cells).

FIG. 4A shows directions x, y, and z that can correspond to thedirections x, y, and z directions of the structure (physical structure)of memory device 400 shown in FIG. 4B through FIG. 4F. As described inmore detail below with reference to FIG. 4B through FIG. 4F, memorycells in each of memory cell groups 401 _(A) and 401 _(B) can be formedvertically (e.g., stacked over each other in a vertical stack in thez-direction) over a substrate of memory device 400.

As shown in FIG. 4A, memory device 400 can include switches (e.g.,transistors) N0, N1, and N2 coupled to the memory cells of each ofmemory cell groups 401 _(A) and 401 _(B). Memory device 400 can includeconductive lines 480 a, 481 a, and 482 a that can carry signals CS₀,CS₁, and CS₂, respectively. Memory device 400 can use signals CS₀, CS₁,and CS₂ to control (e.g., turn on or turn off) switches N0, N1, and N2,respectively, during write and read operations of memory device 400.

Memory device 400 can include data lines (bit lines) 430 _(A), 431 _(A),and 432 _(A) associated with memory cell group 401 _(A). Data lines 430_(A), 431 _(A), and 432 _(A) can carry signals BL0 _(A), BL1 _(A), andBL2 _(A), respectively, to provide information to be stored inrespective memory cells (e.g., during a write operation) or informationread (e.g., sensed) from respective memory cells (e.g., during a readoperation) 410 _(A), 411 _(A), 412 _(A), and 413 _(A) of memory cellgroup 401 _(A).

Memory device 400 can include data lines (bit lines) 430 _(B), 431 _(B),and 432 _(B) associated with memory cell group 401 _(B). Data lines 430_(B), 431 _(B), and 432 _(B) can carry signals BL0 _(B), BL1 _(B), andBL2 _(B), respectively, to provide information to be stored in (e.g.,during a write operation) or information read (e.g., sensed) from (e.g.,during a read operation) respective memory cells 410 _(B), 411 _(B), 412_(B), and 413 _(B) of memory cell group 401 _(B).

Memory device 400 can include word lines 440, 441, 442, and 443 that canbe shared by memory cell groups 401 _(A) and 401 _(B). Word lines 440,441, 442, and 443 can carry signals WL₀, WL₁, WL₂, and WL₃,respectively. During a write operation or a read operation, memorydevice 400 can use word lines 440, 441, 442, and 443 to access thememory cells of memory cell groups 401 _(A) and 401 _(B).

Memory device 400 can include plate lines 450, 451, 452, and 453 thatare shared by memory cell groups 401 _(A) and 401 _(B). Plate lines 450,451, 452, and 453 can carry signals PL₀, PL₁, PL₂, and PL₃,respectively. Each of plate lines 450, 451, 452, and 453 can be used asa common plate (e.g., can be coupled to ground) for the capacitors(described below) of respective memory cells of memory cell groups 401_(A) and 401 _(B). Memory device 400 can include a common conductiveline 490, which can be similar to common conductive line 290 of memorydevice 200 or 300 described above.

As shown in FIG. 4A, each of memory cells 410 _(A), 411 _(A), 412 _(A),and 413 _(A) and each of memory cells 410 _(B), 411 _(B), 412 _(B), and413 _(B) can include a transistor T3 and one capacitor C, such that eachof these memory cells can be called a 1T1C memory cell. For simplicity,the same label T3 is given to the transistors of different memory cellsamong the memory cells of memory device 400, and the same label C isgiven to the capacitor of different memory cells of memory device 400.

As shown in FIG. 4A, capacitor C can include a capacitor plate 402 a,and another capacitor plate that can be part of (e.g., electricallyconnected to) a respective plate line among plate lines 450, 451, 452,and 453. Capacitor plate 402 a can form part of a storage node (e.g., amemory element) of a corresponding memory cell of the memory cells ofmemory device 400. Capacitor plate 402 a of a particular memory cell canhold a charge that can be used to represent the value (e.g., “0” or “1”)of information stored in a that particular memory cell. Capacitor plate402 a in a particular memory cell can be electrically connected (e.g.,directly coupled) to a terminal (e.g., source or drain) of transistor T3of that particular memory cell.

As shown in FIG. 4A, memory device 400 can include other elements, suchas memory cell 417 _(A) of a memory cell group 402 _(A), memory cell 417_(B) of a memory cell group 402 _(B), plate line 457 (and associatedsignal PL₇), and conductive line 485 a (and associated signal CS₅). Suchother elements are similar to those described above. Thus, forsimplicity, detailed description of such other elements of memory device400 is omitted from the description herein.

FIG. 4B shows a side view (e.g., cross-sectional view) of a structure ofa portion of memory device 400 that is schematically shown in FIG. 4A,in which the memory cell structure of each of the memory cells caninclude parts from a single pillar, according to some embodimentsdescribed herein.

As shown in FIG. 4B, memory device 200 can include a substrate 499, andpillars (e.g., semiconductor material pillars) 401 _(A)′ and 401 _(B)′formed over substrate 499. Each of pillars 401 _(A)′ and 401 _(B)′ has alength extending in the z-direction (e.g., vertical direction)perpendicular to substrate 499. Each of pillars 401 _(A)′ and 401 _(B)′can include n+ portions and P_Si portions. Memory cells 410 _(A), 411_(A), 412 _(A), and 413 _(A) can be formed (e.g., formed vertically withrespect to substrate 499) along different segments of pillar 401 _(A)′.Memory cell 410 _(B), 411 _(B), 412 _(B), and 413 _(B) can be formed(e.g., formed vertically with respect to substrate 499) along differentsegments of a pillar 401 _(B)′. Memory device 400 can include circuitry495 formed in substrate 499. Substrate 499, common conductive line 490,and circuitry 495 can be similar to substrate 299, common conductiveline 290, and circuitry 295, respectively, of memory device 200 (FIG.2D). The signals of memory device 400 shown in FIG. 4B (e.g., signalsBL0 _(B), BL1 _(B), BL2 _(B), WL0 ₀, WL0 ₁, WL0 ₂, WL0 ₃, PL0 ₀, PL0 ₁,PL0 ₂, PL0 ₃, CS₀, CS₁, and CS₂) are the same as those shown in FIG. 4A.

FIG. 4C shows a portion of memory device 400 of FIG. 4B including memorycells 412 _(A) and 413 _(A) (of memory cell group 401 _(A)) and memorycells 412 _(B) and 413 _(B) (of memory cell group 401 _(B)). Thefollowing description discusses the portion of memory device 400 shownFIG. 4C in more detail. Elements in other portion of memory device 400(e.g., portion that includes memory cells 410 _(A), 410 _(B), 411 _(A),and 411 _(B) in FIG. 4B) has similar structures as the elements shown inFIG. 4C and are not described herein for simplicity.

As shown in FIG. 4C, memory device 400 can include dielectrics (e.g.,dielectric materials) 405 located at a respective location (adjacentrespective segment) of pillar 401 _(A)′. Dielectrics 405 can includesilicon oxide or other dielectric materials. Dielectrics 405 canseparate (e.g., electrically isolate) pillars 401 _(A)′ and 401 _(B)′from write word lines 440, 441, 442, and 443, plate lines 450, 451, 452,and 453, and conductive line 482 a.

Each of data lines 431 _(A) and 432 _(A) can contact (e.g., electricallyconnect to) a respective n+ portion of pillar 401 _(A)′. Each of datalines 431 _(B) and 432 _(B) can contact (e.g., electrically connect to)a respective n+ portion of pillar 401 _(B)′.

Capacitor plate 402 a (which is part of a storage node (or memoryelement) of a respective memory cell) can include (e.g., can be formedfrom) part of an n+ portion. For example, part of n+ portion 413 _(A)′can be a storage node (e.g., a memory element) of memory cell 413 _(A).In another example, part of n+ portion 413 _(B)′ can be a storage node(e.g., a memory element) of memory cell 413 _(B).

Transistor T3 can include transistor elements (e.g., body, source, anddrain) that are parts of a combination of a portion P_Si of a particularpillar (pillar 401 _(A)′ or 401 _(B)′) and two n+ portions adjacent theportion P_Si of the same particular pillar. Transistor T3 can alsoinclude a gate, which is part of a respective word line. For example,part of word line 443 can be the gate of transistor T3 of memory cell413 _(A), parts of n+ portions 413 _(A)′ and 413 _(A)″ can be the sourceand drain (or drain and source), respectively, of transistor T3 ofmemory cell 413 _(A), and P_Si portion 413 _(A)′″ can be a body (e.g.,floating body) of transistor T3 of memory cell 413 _(A) (where atransistor channel can be formed in the body). In another example, partof word line 442 can be the gate of transistor T3 of memory cell 412_(A), parts of n+ portions 412 _(A)′ and 412 _(A)″ can be the source anddrain (or drain and source), respectively, of transistor T3 of memorycell 412 _(A), and P_Si portion 412 _(A)′″ can be a body (e.g., floatingbody) of transistor T3 of memory cell 412 _(A) (where a transistorchannel can be formed in the body).

Switch N2 can operate as a transistor, such that the structure of switchN2 can include the structure of a transistor. Switch N2 can includeparts of a combination of a portion P_Si of a particular pillar (pillar401 _(A)′ or 401 _(B)′) and two n+ portions adjacent the portion P_Si ofthe same particular pillar. For example, in switch N2 between memorycells 412 _(A) and 413 _(A), part of conductive line 482A, and n+portions of pillar 401 _(A)′ and 401 _(B)′ can be the gate, source, anddrain, respectively, of a transistor in switch N2.

Word lines 442 and 443, data lines 431 _(A), 431 _(B), 432 _(A), and 432_(B), plate lines 452 and 453, and conductive line 482A can includeconductive materials. Examples of the conductive materials includepolysilicon (e.g., conductively doped polysilicon), metals, or otherconductive materials.

In FIG. 4C, lines 4D, 4E, and 4F are sectional lines. As describedbelow, some portions (e.g., partial top views) of memory device 400taken from lines 4D, 4E, and 4F are shown in FIG. 4D, FIG. 4E, and FIG.4F, respectively.

FIG. 4D shows a portion (e.g., partial top view) of memory device 400including some elements viewed from line 4D of FIG. 4C down to substrate499 (FIG. 4B), according to some embodiments described herein. Forsimplicity, detailed description of the same elements shown in FIG. 4Athrough FIG. 4C (and other figures described below) are not repeated.

For purposes of illustrating relative locations of some of the elementsof memory device 400, FIG. 4D through FIG. 4F show the locations forsome elements of memory device 400 that are schematically shown in FIG.4A but are not structurally shown in FIG. 4B and FIG. 4C. For example,FIG. 4D shows memory cells 417 _(A) and 417 _(B) and word lines 447 and443 that are schematically shown in FIG. 4A but are not structurallyshown in FIG. 4B and FIG. 4C. In another example, FIG. 4D shows anX-decoder and a Y-decoder that are not shown in FIG. 4A and FIG. 4B.However, the X-decoder and the Y-decoder in FIG. 4D can be part ofcircuitry 495 in substrate 499 in FIG. 4B of memory device 400. TheX-decoder and the Y-decoder (FIG. 4D) can be part of respective row andcolumn access circuitry of memory device 400. As shown in FIG. 4D, eachof read data lines 432 _(A) and 432 _(B) can have a length extending inthe y-direction. Each of word lines 443 and 447 can have a lengthextending in the x-direction and are located below (underneath) readdata lines 432 _(A) and 432 _(B). FIG. 4D does not show other word linesof memory device 400 that are located below respective word lines 443and 447.

FIG. 4E shows a portion (e.g., partial top view) of memory device 400including some elements viewed from line 4E of FIG. 4C down to substrate499 (FIG. 4B), according to some embodiments described herein. As shownin FIG. 4E, each of plate lines 453 and 457 can have a length extendingin the x-direction. FIG. 4E does not show other plate lines of memorydevice 400 that are located below respective plate lines 453 and 457.

FIG. 4F shows a portion (e.g., partial top view) of memory device 400including some elements viewed from line 4F of FIG. 4C down to substrate499, according to some embodiments described herein. As shown in FIG.4F, each of conductive lines 482 a and 485 a can have a length extendingin the x-direction. FIG. 4F does not show other conductive lines ofmemory device 400 that are located below respective conductive lines 482a and 485 a.

FIG. 4G shows a schematic diagram of a portion of memory device 400 ofFIG. 4A including memory cells 412 _(A) and 413 _(A). FIG. 4H is a chartshowing example values of voltages provided to the signals of memorydevice 400 of FIG. 4G during three different example write operations421, 422, and 423, according to some embodiments described herein. Thefollowing description refers to FIG. 4G and FIG. 4H.

In write operation 421, memory cell 412 _(A) is selected to storeinformation, and memory cell 413 _(A) is unselected (e.g., not selectedto store information). In write operation 422, memory cell 413 _(A) isselected to store information, and memory cell 412 _(A) is unselected.In write operation 423 both memory cells 412 _(A) and 413 _(A) areselected to store information.

As shown in FIG. 4H, signal CS₂ can be provided with a voltage V3 (toturn off switch N2) during a write operation (e.g., write operation 421,422, or 423) of memory device 400 regardless of which of memory cells412 _(A) and 413 _(A) is selected. Voltage V3 can be 0V (e.g., ground).Each of signals PL₂ and PL₃ can be provided with a voltage V4 during awrite operation (e.g., write operation 421, 422, or 423) of memorydevice 400 regardless of which of memory cells 412 _(A) and 413 _(A) isselected. Voltage V4 can be 0V (e.g., ground).

In write operation 421, signal WL₃ (associated with unselected memorycell 413 _(A)) can be provided with a voltage V5 (to turn off transistorT3 of unselected memory cell 413 _(A)). Voltage V5 can be 0V (e.g.,ground). Signal WL₂ (associated with selected memory cell 412 _(A)) canbe provided with a voltage V6 (to turn on transistor T3 of selectedmemory cell 412 _(A)). The value of voltage V6 is greater than the valueof voltage V5 (V6>V5). The value of voltage V6 can be greater than asupply voltage (e.g., VDD) of memory device 500 (e.g., V6>VDD). SignalBL2 _(A) (associated with unselected memory cell 413 _(A)) can beprovided with a voltage Vx, which can be 0V (e.g., Vx=V3 or Vx=V4) orvoltage Vx can be some voltage (e.g., an optimal voltage) between 0V andVDD (e.g., one-half VDD) depending on the memory cell leakagecharacteristics. Signal BL1 _(A) (associated with selected memory cell412 _(A)) can be provided with a voltage V_(BL1). The value of voltageV_(BL1) can be based on the value of information to be stored in memorycell 412 _(A). For example, voltage V_(BL1) can have one value (e.g.,V_(BL1)=0V or V_(BL1)<0) if information to be stored in memory cell 412_(A) has one value (e.g., “0”) and another value (e.g., V_(BL1)>0V(e.g., V_(BL1)=1V)) if information to be stored in memory cell 412 _(A)has another value (e.g., “1”). As mentioned above, VDD is referred torepresent some voltage levels, however, they are not limited to a supplyvoltage (e.g., VDD) of the memory device (e.g., memory device 400). Forexample, if an internal voltage generator of the memory device (e.g.,memory device 400) generates an internal voltage less than VDD and usesthat internal voltage to be the memory array voltage then V_(BL1) (FIG.4H) can be less than VDD, but more than 0V depending on the memory arrayvoltage.

In write operation 422, the voltages provided to signals WL₂ (associatedwith unselected memory cell 412 _(A)) and WL₃ (associated with selectedmemory cell 413 _(A)) can be swapped, such that WL₂=V5 and WL₃=V6.Signal BL1 _(A) (associated with unselected memory cell 412 _(A)) can beprovided with a voltage Vx. Signal BL2 _(A) (associated with selectedmemory cell 413 _(A)) can be provided with a voltage V_(BL2). The valueof voltage V_(BL2) can be based on the value of information to be storedin memory cell 413 _(A). For example, voltage V_(BL2) can have one value(e.g., V_(BL2)=0V or V_(BL2)<0) if information to be stored in memorycell 413 _(A) has one value (e.g., “0”) and another value (e.g.,V_(BL2)>0V (e.g., V_(BL2)=1V, VDD, or greater than 0V)) if informationto be stored in memory cell 413 _(A) has another value (e.g., “1”).

In write operation 423, both memory cells 412 _(A) and 413 _(A) areselected to store information. Thus, the voltages provided to signalsassociated with memory cells 412 _(A) and 413 _(A) can be the same asthose in write operations 421 and 422 for a selected memory cell, suchas WL₂=WL₃=V6, BL1 _(A)=V_(BL1), and BL2 _(A)=V_(BL2).

FIG. 4I is a flow chart showing different stages of a read operation 460of memory device 400 of FIG. 4A through FIG. 4F, according to someembodiments described herein. As shown in FIG. 4I, read operation 460(to read information from a selected memory cell) can include differentstages, such as a pre-sense (e.g., pre-read) stage 461, a sense (orread) stage 462, a reset stage 463, and a restore stage 464. Thesestages (461, 462, 463, and 464) can be performed one stage after anotherin an order shown in FIG. 4I, starting from pre-sense stage 461. In FIG.4I, sense stage 462 (to determine the value of information stored in aselected memory cell) can be performed in two different sense schemes.One sense scheme (e.g., shown in FIG. 4M) is based on the thresholdvoltage (Vt) shift of a transistor (e.g., transistor T3) coupled to theselected memory cell. An alternative sense scheme (e.g., FIG. 4M′) isbased on a property (e.g., self-latching) of a bipolar junctiontransistor, which is intrinsically built-in a transistor (e.g.,transistor T3) of the selected memory cell. The stages (461, 462, 463,and 464) of read operation 460 are described in detail with reference toFIG. 4J through FIG. 4R.

FIG. 4J shows a schematic diagram of a portion of memory device 400 ofFIG. 4A including memory cells 412 _(A) and 413 _(A). FIG. 4K is a chartshowing values of signals in FIG. 4J during pre-sense stage 461 of readoperation 460 of FIG. 4I. The following description refers to FIG. 4Jand FIG. 4K. Memory cell 413 _(A) is assumed to be a selected memorycell (to be read in this example), and memory cell 412 _(A) is assumedto be an unselected memory cell (not to be read in this example).

Pre-sense stage 461 can be performed to store (e.g., temporarily store)information in the body of transistor T3 of memory cell 413 _(A) andinformation in the body of transistor T3 of memory cell 412 _(A). Thebodies of transistors T3 of memory cell 413 _(A) and 412 _(A) areincluded in P_Si portions 413′ and 412′″, respectively, in FIG. 4C.Referring to FIG. 4J and FIG. 4K, the value of the information stored inthe body of transistor T3 of memory cell 413 _(A) is based on the valueof the information stored in capacitor plate 402 a of memory cell 413_(A). The value of the information stored in the body of transistor T3of memory cell 412 _(A) is based on the value of the information storedin capacitor plate 402 a (FIG. 4C and FIG. 4J) of memory cells 412 _(A).

Reading information from a selected memory cell (e.g., memory cell 413_(A) in this example) involves detection of current (e.g., an amount ofcurrent) on a conductive path (e.g., current path) between a data lineassociated with the selected memory cell and a data line associated withan adjacent unselected memory cell (e.g., memory cell 412 _(A) in thisexample). For example, in FIG. 4K, reading information from memory cell413 _(A) can involve detection of current on a conductive path betweendata lines 432 _(A) and 431 _(A).

Information stored in capacitor plate 402 a of the selected memory celland information stored in capacitor plate 402 a of the unselected memorycell may be lost after reading of information from the selected memorycell. In pre-sense stage 461 (FIG. 4K), temporarily storing informationin the body of transistor T3 of each of memory cells 412 _(A) and 413_(A) allows restoring (writing back) information to the selected memorycell and the unselected memory cell after the selected memory cell isread (e.g., sensed). Thus, in a read operation of a selected memory cell(e.g., memory cell 413 _(A)), the body of transistor T3 to the selectedmemory cell and the body of transistor T3 of an adjacent unselectedmemory cell (e.g., memory cell 412 _(A)) can be used as temporarystorage locations.

The voltages shown in FIG. 4K can allow information to be stored in thebody of transistor T3 in the selected memory cell and the unselectedmemory cell. The information temporarily stored in the body oftransistor T3 can be in the form of holes. Holes in the body oftransistor T3 as described here refers to an extra amount of holes thatmay be generated in the material (e.g., P_Si material) that forms partof the body of transistor T3.

As shown in FIG. 4K, in pre-sense stage 461, signals CS₂ can be providedwith a voltage V_(L) (e.g., 0V) to turn off switch N2. Each of signalsPL₂ and PL₃ can be provided with a voltage V_(PL) (e.g., 0V). Each ofsignals BL1 _(A) and BL2 _(A) can be provided with a voltage V_(BL) _(_)_(H) (e.g., V_(BL) _(_) _(H)=VDD). Each of signals WL₂ and WL₃ can beprovided with a voltage V_(WL). The value of voltage V_(WL) can beselected (e.g., 0<V_(WL)<V_(BL) _(_) _(H)) to slightly turn ontransistor T3 of each of memory cells 412 _(A) and 413 _(A). This mayallow impact ionization (II) current at the drain of transistor T3 ofmemory cells 413 _(A) and II current at the drain of transistor T3 ofmemory cell 413 _(A). The II currents allow generation of holes in thebody of the transistor T3 of memory cells 412 _(A) and holes in the bodyof transistor T3 of memory cell 412 _(A). The presence or absence ofholes in the body of transistor T3 of memory cells 413 _(A) representsthe value (“0” or “1”) of information stored in capacitor plate 402 a ofmemory cells 413 _(A). Similarly, the presence or absence of holes inthe body of transistor T3 of memory cells 412 _(A) represents the value(“0” or “1”) of information stored in capacitor plate 402 a of memorycells 412 _(A).

Pre-sense stage 461 in FIG. 4K may or may not generate holes in the bodyof transistor T3 of memory cell 413 _(A), depending upon the value ofinformation stored in memory cell 413 _(A). For example, holes may begenerated (e.g., accumulated) in the body of transistor T3 of memorycell 413 _(A) if “0” is stored in capacitor plate 402 a of memory cell413 _(A). In another example, holes may not be generated (e.g., notaccumulated) in the body of transistor T3 of memory cell 413 _(A) if “1”is stored in capacitor plate 402 a of memory cell 413 _(A). Similarly,holes may be generated (e.g., accumulated) in the body of transistor T3of memory cell 412 _(A) if “0” is stored in capacitor plate 402 a ofmemory cell 412 _(A). In another example, holes may not be generated(e.g., not accumulated) in the body of transistor T3 of memory cell 412_(A) if “1” is stored in capacitor plate 402 a of memory cell 412 _(A).

The presence or absence of holes in the body of transistor T3 of memorycell 413 _(A) can cause a change (e.g., shift) in the threshold voltageof memory cell 413 _(A). This change (e.g., temporary change) in thethreshold voltage of transistor T3 allows a sense voltage to be providedto the gate of transistor T3 of a particular memory cell (e.g., memorycell 412 _(A) or 413 _(A) in) in sense stage 462 (e.g., described inmore detail below) in order to determine the value of information thatwas stored (e.g., stored in capacitor plate 402 a) of that particularmemory cell.

As shown in FIG. 4K′, in pre-sense stage 461, signals CS₂ can beprovided with a voltage V_(L) (e.g., 0V) to turn off switch N2. Each ofsignals PL₂ and PL₃ can be provided with a voltage V_(PL) (e.g., 0V).Each of signals BL1 _(A) and BL2 _(A) can be provided with a voltageV_(BL) _(_) _(L) (e.g., V_(BL) _(_) _(L)=0V). Each of signals WL₂ andWL₃ can be provided with a voltage V_(WL). The value of voltage V_(WL)can be selected (e.g., V_(WL)<0) to initiate the band to band tunnelingcurrent conduction of transistor T3 of each of memory cells 412 _(A) and413 _(A). This may allow GIDL current at the drain of transistor T3 ofmemory cells 413 _(A) and GIDL current at the drain of transistor T3 ofmemory cell 413 _(A). The GIDL currents allow generation of holes in thebody of the transistor T3 of memory cells 412 _(A) and holes in the bodyof transistor T3 of memory cell 412 _(A). The presence or absence ofholes in the body of transistor T3 of memory cells 413 _(A) representsthe value (“1” or “0”) of information stored in capacitor plate 402 a ofmemory cells 413 _(A). Similarly, the presence or absence of holes inthe body of transistor T3 of memory cells 412 _(A) represents the value(“1” or “0”) of information stored in capacitor plate 402 a of memorycells 412 _(A).

Pre-sense stage 461 in FIG. 4K′ may or may not generate holes in thebody of transistor T3 of memory cell 413 _(A), depending upon the valueof information stored in memory cell 413 _(A). For example, holes may begenerated (e.g., accumulated) in the body of transistor T3 of memorycell 413 _(A) if “1” is stored in capacitor plate 402 a of memory cell413 _(A). In another example, holes may not be generated (e.g., notaccumulated) in the body of transistor T3 of memory cell 413 _(A) if “0”is stored in capacitor plate 402 a of memory cell 413 _(A). Similarly,holes may be generated (e.g., accumulated) in the body of transistor T3of memory cell 412 _(A) if “1” is stored in capacitor plate 402 a ofmemory cell 412 _(A). In another example, holes may not be generated(e.g., not accumulated) in the body of transistor T3 of memory cell 412_(A) if “0” is stored in capacitor plate 402 a of memory cell 412 _(A).

FIG. 4L shows a schematic diagram of a portion of memory device 400 ofFIG. 4A including memory cells 412 _(A) and 413 _(A). FIG. 4M is a chartshowing values of signals in FIG. 4L during sense stage 462 using ascheme based threshold voltage shift. Sense stage 462 is performed afterpre-sense stage 461 (FIG. 4K). FIG. 4N is a graph showing relationshipsamong cell current (an amount of a current) flowing through a memorycell (e.g., 412 _(A) or 413 _(A)), the value (e.g., “0” or “1”) ofinformation stored in a memory cell (e.g., 412 _(A) or 413 _(A)), andvoltages V_(SENSE) and V_(PASS) (that can be applied to the gate oftransistor T3 of memory cell 412 _(A). or 413 _(A)). The followingdescription refers to FIG. 4L, FIG. 4M, and FIG. 4N.

As shown in FIG. 4M, sense stage 462 can include a sense interval 462.1(which can occur from time T1 to time T2) and a sense interval 462.2(which can occur from time T3 to time T4). Sense interval 462.2 occursafter sense interval 462.1 (e.g., times T3 and T4 occur after times T1and T2). During sense interval 462.1, memory cell 413 _(A) is sensed todetermine the value of information stored in memory cell 413 _(A).During sense interval 462.2 (after memory cell 413 _(A) is sensed),memory cell 412 _(A) is sensed to determine the value of informationstored in memory cell 412 _(A). Thus, in sense stage 462, memory cells413 _(A) and 412 _(A) are sensed in a sequential fashion (one cell afteranother). FIG. 4M shows sensing of memory cell 413 _(A) (during senseinterval 462.1) is performed before sensing of memory cell 412 _(A)(during sense interval 462.2) as an example. Alternatively, a reversedorder can be used, such that sensing of memory cell 412 _(A) can beperformed before sensing of memory cell 413 _(A).

As mentioned above, information stored in both memory cells 413 _(A) and412 _(A) may be lost after sensing of one or both of memory cells 413_(A) and 412 _(A). Thus, although only memory cell 413 _(A) is assumedto be a selected memory cell to read information from memory cell 413_(A), sensing both memory cells 413 _(A) and 412 _(A) during sense stage462 allows the value (e.g., “0” or “1”) of information stored in each ofmemory cells 413 _(A) and 412 _(A) to be obtained during sense stage462. The obtained values (sensed values) can be stored (e.g., stored instorage circuitry (e.g., data buffers, latches, or other storageelements, not shown)) and can be subsequently used as values forinformation to be restored (e.g., written back) to both memory cells 413_(A) and 412 _(A) during restore stage 464 (described below withreference to FIG. 4R). Sensing of memory cells 413 _(A) and 412 _(A)during sense stage 462 can be performed using voltages shown in FIG. 4M.

As shown in FIG. 4M, some signals can be provided with the same voltagesbetween sense intervals 462.1 and 462.2. For example, signals CS₂ can beprovided with a voltage V_(H) (V_(H)>0V, e.g., V_(H)=VDD) to turn onswitch N2 (FIG. 4L). Each of signals PL₂ and PL₃ can be provided with avoltage V_(PL) (the same as the voltage in pre-sense stage 461 in FIG.4K). Signal BL2 _(A) can be provided with a voltage V_(BL) _(_) _(H).Signal BL1 _(A) be provided with voltage V_(BL) _(_) _(L). The value ofvoltage V_(BL) _(_) _(L) (e.g., V_(BL) _(_) _(L)=0V) is less than thevalue of voltage V_(BL) _(_) _(H).

Signals WL₂ and WL₃ can be provided with voltages V_(SENSE) and V_(PASS)(e.g., during sense interval 462.1), respectively, or voltages V_(PASS)and V_(SENSE) (during sense interval 461.2), respectively, depending onwhich of memory cells 413 _(A) and 412 _(A) is sensed. The value ofvoltage V_(PASS) is greater than the value of voltage V_(SENSE).

Voltage V_(PASS) can have a value such that transistor T3 of the memorycell not being sensed (e.g., memory cells 412 _(A) during sense interval462.1) is turned on (e.g., becomes conductive) regardless of whether ornot holes are present in the body of transistor T3 of the memory cellnot being sensed (regardless of the value (e.g., “0” or “1”) ofinformation stored in capacitor plate 402 a of the memory cell not beingsensed). For example, during sense interval 462.1, transistor T3 ofmemory cells 412 _(A) is turned on regardless of whether or not holesare present in the body of transistor T3 of the memory cell 412 _(A).This also means that transistor T3 of memory cell 412 _(A) is turned onregardless of the value (e.g., “0” or “1”) of information that wasstored in capacitor plate 402 a of memory cell 412 _(A) because thepresence or absence of holes in the body of transistor T3 of the memorycell 412 _(A) during sense stage 462 depends upon the value ofinformation stored in capacitor plate 402 a of memory cell 412 _(A)before sense stage 462, as described above in the pre-sense stage 461.

In FIG. 4M, voltage V_(SENSE) can have a value such that transistor T3of the memory cell being sensed (e.g., memory cell 413 _(A) during senseinterval 462.1) is turned on or turned off depending whether or notholes are present in the body of transistor T3 of the memory cell beingsensed. For example, during sense interval 462.1, transistor T3 ofmemory cell 413 _(A) is turned on (e.g., becomes conductive) if holesare present in the body of transistor T3 of memory cell 413 _(A). Thisalso means that transistor T3 of memory cell 413 _(A) is turned on if“0” (in the case of II and “1” in the case of GIDL) was stored incapacitor plate 402 a of memory cell 413 _(A) before pre-sense stage 461(which is before sense stage 462) is performed. In another example,during sense interval 462.1, transistor T3 of memory cell 413 _(A) isturned off (e.g., does not become conductive) if holes are absent fromthe body of transistor T3 of memory cell 413 _(A). This also means thattransistor T3 of memory cell 413 _(A) is turned off if “1” was stored incapacitor plate 402 a of memory cell 413 _(A) before pre-sense stage 461(which is before sense stage 462) is performed.

The values of voltages V_(SENSE) and V_(PASS) can be based on thecurrent-voltage relationship shown in FIG. 4N for the case for theresult of a pre-sense stage based on II current mechanism (FIG. 4K).Curve 410 indicates that current (cell current) may flow through aparticular memory cell (e.g., through transistor T3 of that particularmemory cell) if voltage V_(SENSE) is provided to the signal (e.g., WL₂or WL₃) at the gate of transistor T3 of that particular memory cell, and“0” is stored in capacitor plate 402 a of that particular memory cell.As described above, holes may be generated in the body of transistor T3of that particular memory cell if “0” is stored in capacitor plate 402 aof that particular memory cell.

However, no current (or a negligible (e.g., undetectable) amount ofcurrent) may flow through a particular memory cell if voltage V_(SENSE)is provided to the signal (e.g., WL₂ or WL₃) at the gate of transistorT3 of that particular memory cell, and “1” is stored in the particularmemory cell. As described above, holes may not be generated in the bodyof transistor T3 of that particular memory cell if “1” is stored incapacitor plate 402 a of that particular memory cell.

Curve 411 shows that current (cell current) may flow through aparticular memory cell (e.g., through transistor T3 of that particularmemory cell) if voltage V_(PASS) is provided to the signal (e.g., WL₂ orWL₃) at the gate of transistor T3 of that particular memory cell,regardless of the value (e.g., “0” or “1”) of information stored in thatparticular memory cell. In the case for the result of a pre-sense stagebased on GIDL current mechanism (FIG. 4K′), curve 410 of FIG. 4N canpresent the case where holes may be generated in the body of transistorT3 of that particular memory cell if “1” is stored in capacitor plate402 a of that particular memory cell, and curve 411 can present the casewhere no holes may be generate in the body of transistor T3 of thatparticular memory cell if “0” is store in capacitor plate 402 a of thatparticular memory cell.

Thus, during sense interval 462.1 (to sense memory cell 413 _(A)), iftransistor T3 of memory cell 413 _(A) is turned on (e.g., if holes arepresent in the body of transistor T3 of memory cell 413 _(A) (generatedduring pre-sense stage 461 of FIG. 4K)), then current may flow betweendata lines 431 _(A) and 432 _(A) (FIG. 4L) through transistor T3 ofmemory cell 413 _(A), switch N2 (which is turned on), and transistor T3(which is turned on) of memory cell 412 _(A). During sense interval462.1, if transistor T3 of memory cell 413 _(A) is turned off (e.g., ifholes are absent from the body of transistor T3 of memory cell 413 _(A)(not generated during pre-sense stage 461 of FIG. 4K)), then current maynot flow between data lines 431 _(A) and 432 _(A) (FIG. 4L) becausetransistor T3 of memory cell 413 _(A) is turned off (although switch N2and transistor T3 of memory cell 412 _(A) are turned on).

Similarly, during sense interval 462.2 (to sense memory cell 412 _(A)),if transistor T3 of memory cell 412 _(A) is turned on (e.g., if holesare present in the body of transistor T3 of memory cell 412 _(A)(generated during pre-sense stage 461 of FIG. 4K) in the body oftransistor T3 of memory cell 412 _(A)), then current may flow betweendata lines 431 _(A) and 432 _(A) (FIG. 4L) through transistor T3 ofmemory cell 413 _(A) (which is turned on), switch N2 (which is turnedon), and transistor T3 of memory cell 412 _(A). During sense interval462.1, if transistor T3 of memory cell 412 _(A) is turned off (e.g., ifholes are absent from the body of transistor T3 of memory cell 412 _(A)(not generated during pre-sense stage 461 of FIG. 4K), then current maynot flow between data lines 431 _(A) and 432 _(A) (FIG. 4L) becausetransistor T3 of memory cell 412 _(A) is turned off (although switch N2and transistor T3 of memory cell 413 _(A) are turned on).

Memory device 400 can include a detection circuit (not shown) that canbe coupled to data line 432 _(A) or data line 431 _(A). Memory device400 can use the detection circuit to determine the value (e.g., “0” or“1”) of information stored in the memory cell being sensed based on thepresence or absence of current between data lines 432 _(A) and 431 _(A)during sense intervals 462.1 and 462.2. For example, during senseinterval 462.1, memory device 400 can determine that “0” was stored inmemory cell 413 _(A) if current is detected, and “1” was stored inmemory cell 413 _(A) if no current (or a negligible of current) isdetected. In another example, during sense interval 462.2, memory device400 can determine that “0” was stored in memory cell 412 _(A) if currentis detected, and “1” was stored in memory cell 412 _(A) if no current(or a negligible of current) is detected. Memory device 400 can includestorage circuitry (e.g., data buffers, latches, or other storageelements) to store the values (e.g., “0” or “1”) of information sensedfrom memory cells 412 _(A) and 413 _(A) during sense stage 462. Memorydevice 400 can used these stored values as values for information to bewritten back to memory cells 412 _(A) and 413 _(A) in restore stage 464(described below).

FIG. 4M′ is a chart showing values of signals in FIG. 4L during sensestage 462 using an alternative sense scheme based on a property (e.g.,self-latching) of a built-in bipolar junction transistor. The voltagevalues of FIG. 4M′ can be the same those shown in FIG. 4M, except thatin FIG. 4M′ signal WL₃ can be provided with voltages V_(G) (instead ofV_(SENSE)) when memory cell 413 _(A) is sensed, and signal WL₂ can beprovided with voltages V_(G) (instead of V_(SENSE)) when memory cell 412_(A) is sensed. As shown in FIG. 4M′, sense stage 462 can include asense interval 462.1′ (which can occur from time T1′ to time T2′) and asense interval 462.2′ (which can occur from time T3′ to time T4′). Senseinterval 462.2′ (when memory cell 412 _(A) is sensed) occurs after senseinterval 462.1′ (when memory cell 413 _(A) is sensed). Voltage V_(G) canbe less than zero volts, such as a slightly negative voltage (e.g.,V_(G)<0V). Applying voltage V_(G) of less than zero volts can induce aphenomenon such as impact ionization current (near data line 413 _(A))and subsequent BJT latch. Memory device 400 can include a detectioncircuit (not shown) to determine the value (e.g., “0” or “1”) ofinformation stored in memory cell 412 _(A) (when it is sensed) memorycell 413 _(A) (when it is sensed) in ways similar to the currentdetection described above with reference to FIG. 4M.

FIG. 4O shows a schematic diagram of a portion of memory device 400 ofFIG. 2A including memory cells 412 _(A) and 413 _(A). FIG. 4P is a chartshowing values of signals in FIG. 4O during reset stage 463, which isperformed after sense stage 462 (FIG. 4M).

Reset stage 463 can be can be performed to clear holes from the body oftransistor T3 of each of memory cells 412 _(A) and 413 _(A) that mayhave been generated during pre-sense stage 461 (FIG. 4K). Clearing holesin reset stage 463 may reset the threshold voltage of transistor T3 ofeach of memory cells 412 _(A) and 413 _(A). Reset stage 463 may helpmaintain the relationships (e.g., FIG. 4N) among cell current flowingthrough memory cells 412 _(A) and 413 _(A), the value (e.g., “0” or “1”)of information stored in memory cells 412 _(A) and 413 _(A), andvoltages V_(SENSE) and V_(PASS). The following description refers toFIG. 4O and FIG. 4P.

As shown in FIG. 4P, signals CS₂ can be provided with either voltageV_(L) or voltage V_(H). Each of signals PL₂ and PL₃ can be provided witha voltage V_(PL). Each of signals BL1 _(A) and BL2 _(A) can be providedwith a voltage V_(BL) _(_) _(X).

Each of signals WL₂ and WL₃ can be provided with voltages V_(WLy).Voltage V_(WLy) can have a value such that transistor T3 of each ofmemory cells 412 _(A) and 413 _(A) can be turned on. For example, thevalue of voltage V_(WLy) can be greater than 0V (e.g., greater thanground) and equal to or less than the supply voltage (e.g., VDD) ofmemory device 400. With the values of the signals shown in FIG. 4P,holes (e.g., generated during pre-sense stage 461 in FIG. 4K) can becleared from the body of transistor T3 of memory cells 412 _(A) and 413_(A). The value of voltage V_(BL) _(_) _(X) can be zero volts (e.g.,V_(BL) _(_) _(X)=0V) or alternatively, less than zero volts, such as aslightly negative voltage (e.g., V_(BL) _(_) _(X)<0V).

In a particular reset stage of a different read operation, memory cells(not shown in FIG. 4O) adjacent memory cells 412 _(A) and 413 _(A) maybe reset during that particular reset stage (e.g., similar to resetstage 463 in FIG. 4P) and memory cells 412 _(A) and 413 _(A) areunselected (or unused) in that read operation. In that particular resetstage (to reset the adjacent memory cells, not shown), the value ofvoltages on signals WL₂, WL₃, and CS₂ (FIG. 4O) can be less than zerovolts (e.g., slightly less than zero volts, such as WL₂=WL₃=Vn (e.g.,Vn=−0.3V) if voltages of less than zero volts are provided to signalsBL1 _(A) and BL2 _(A) during that particular reset stage. However, inorder to avoid transistor leakage that may be caused by GIDL current,the value of voltages on signals WL₂, WL₃, and CS₂ (FIG. 4O) can beslightly less than zero volts such as WL₂=WL₃=Vn, but not too much lessthan Vn (e.g., −1V<WL₂=WL₃<−0.3V).

FIG. 4Q shows a schematic diagram of a portion of memory device 400 ofFIG. 2A including memory cells 412 _(A) and 413 _(A). FIG. 4R is a chartshowing values of signals in FIG. 4Q during restore stage 464, which isperformed after reset stage 463 (FIG. 4P). As described above, restorestage 464 can be performed to restore (e.g., write back) information tomemory cells 412 _(A) and 413 _(A) after memory cells 412 _(A) and 413_(A) were sensed (e.g., based on either the sense scheme shown in FIG.4M or the sense scheme shown in FIG. 4M′). The following descriptionrefers to FIG. 4Q and FIG. 4R.

As shown in FIG. 4R, signals CS₂ can be provided with voltage V_(L).Each of signals PL₂ and PL₃ can be provided with a voltage V_(PL). Eachof signals WL₂ and WL₃ can be provided with voltages V6 (e.g., V6>VDD)such that transistor T3 of each of memory cells 412 _(A) and 413 _(A)can be turned on.

Signal BL2 _(A) (associated with memory cell 413 _(A)) can be providedwith a voltage V_(BL2). The value of voltage V_(BL2) can be based on thevalue of information (e.g., “0” or “1’) to be stored (e.g., rewritten)in memory cell 413 _(A). The value of information to be stored in memorycell 413 _(A) during restore stage 464 is the same as the value ofinformation read (sensed) from memory cell 413 _(A) during sense stage462. In FIG. 4R, voltage V_(BL2) can have one value (e.g., V_(BL2)=0V orV_(BL2)<0) if information to be stored in memory cell 413 _(A) has onevalue (e.g., “0”) and another value (e.g., V_(BL2)>0V (e.g.,V_(BL2)=1V)) if information to be stored in memory cell 412 _(A) hasanother value (e.g., “1”). Based on the voltages in FIG. 4R, information(which was sensed in sense stage 462) can be restored in capacitor plate402 a of memory cell 413 _(A).

Similarly, signal BL1 _(A) (associated with memory cell 412 _(A)) can beprovided with a voltage V_(BL1). The value of voltage V_(BL1) can bebased on the value of information (e.g., “0” or “1’) to be stored (e.g.,rewritten) in memory cell 412 _(A). The value of information to bestored in memory cell 412 _(A) during restore stage 464 is the same asthe value of information read (sensed) from memory cell 412 _(A) duringsense stage 462 if the information is pre-sensed using the II pre-sensestage (associated with FIG. 4K). However, if the information ispre-sensed using the GIDL pre-sense stage (associated with FIG. 4K′),then the value of information read (sensed) from memory cell 412 _(A)during sense stage 462 can be inverted during sense stage 462. In FIG.4R, voltage V_(BL1) can have one value (e.g., V_(BL1)=0V or V_(BL1)<0)if information to be stored in memory cell 412 _(A) has one value (e.g.,“0”), and another value (e.g., V_(BL1)>0V (e.g., V_(BL1)=1V)) ifinformation to be stored in memory cell 412 _(A) has another value(e.g., “1”). Based on the voltages in FIG. 4R, information (which wassensed in sense stage 462) can be restored (e.g., in capacitor plate 402a of memory cell 412 _(A)).

In the above example read operation (FIG. 4J through FIG. 4R), onlymemory cell 413 _(A) is assumed to be a selected memory cell. However,both memory cells 413 _(A) and 412 _(A) can be selected in a readoperation. In such a read operation (both memory cells 413 _(A) and 412_(A) are selected), sense stage 462 (FIG. 4M) can also be performed inthe way described above (e.g., the same way where only memory cell 413_(A) is selected) because both memory cells 413 _(A) and 412 _(A) can besensed in a sequential fashion to determine the values of informationstored in memory cells 413 _(A) and 412 _(A).

FIG. 5A shows a schematic diagram of a portion of a memory device 500including memory cells having memory cell structure from asingle-pillar, according to some embodiments described herein. Memorydevice 500 can include a memory array 501. Memory device 500 cancorrespond to memory device 100 of FIG. 1. For example, memory array 501can form part of memory array 101 of FIG. 1. Memory device 500 can be avariation of memory device 400 of FIG. 4A. Thus, for simplicity,detailed description of similar or the same elements (which are giventhe same labels in FIG. 4A and FIG. 5A) of memory devices 400 and 500are not repeated. Differences in structures between memory devices 400and 500 are described below.

As shown in FIG. 5A, memory device 500 can include memory cells memorycell groups (e.g., strings) 501 _(A) and 501 _(B). Each of memory cellgroups 501 _(A) and 501 _(B) can include the same number of memorycells. For example, memory cell group 501 _(A) can include memory cells510 _(A), 511 _(A), 512 _(A), and 513 _(A), and memory cell group 501_(B) can include memory cells 510 _(B), 511 _(B), 512 _(B), and 513_(B). FIG. 5A shows four memory cells in each of memory cell groups 501_(A) and 501 _(B) as an example. The memory cells in memory device 500are volatile memory cells (e.g., DRAM cells).

FIG. 5A shows directions x, y, and z that can correspond to thedirections x, y, and z directions of the structure (physical structure)of memory device 500 shown in FIG. 5B through FIG. 5H. Memory cells ineach of memory cell groups 501 _(A) and 501 _(B) can be formedvertically (e.g., stacked over each other in a vertical stack in thez-direction) over a substrate of memory device 500.

Memory device 500 can omit switches (e.g., transistors) N1 and N2 ofmemory device 400. However, as shown in FIG. 5A, memory device 500 caninclude a transistor T4 in each memory cell in each of memory cellgroups 501 _(A) and 501 _(B). Memory device 500 also includes conductivelines 580, 581, 582, and 583 that can carry signals RSL₀, RSL₁, RSL₂,and RSL₃, respectively. Memory device 500 can use signals RSL₀, RSL₁,RSL₂, and RSL₃ to control (e.g., turn on or turn off) transistor T4 ofrespective memory cells of memory cell groups 501 _(A) and 501 _(B). Thedescription herein uses the term “conductive lines” (referring to lines580, 581, 582, and 583) for ease of describing different elements ofmemory device 500. However, conductive lines 580, 581, 582, and 583 canbe word lines of memory device 500 similar to word lines 440, 441, 442,and 443.

Memory device 500 can include data lines (bit lines) 520 _(A) and 521_(A) (in addition to data lines 430 _(A), 431 _(A), and 432 _(A))associated with memory cell group 501 _(A). Data lines 520 _(A) and 521_(A) can carry signals BLR0 _(A) and BLR1 _(A), respectively, to access(e.g., during a read operation) respective memory cells 510 _(A), 511_(A), 512 _(A), and 513 _(A) of memory cell group 501 _(A).

Memory device 500 can include data lines (bit lines) 520 _(B) and 521_(B) (in addition to data lines 430 _(B), 431 _(B), and 432 _(B))associated with memory cell group 501 _(B). Data lines 520 _(B) and 521_(B) can carry signals BLR0 _(B) and BLR1 _(B), respectively, to access(e.g., during a read operation) respective memory cells 510 _(B), 511_(B), 512 _(B), and 513 _(B) of memory cell group 501 _(B).

As shown in FIG. 5A, each of memory cells 510 _(A), 511 _(A), 512 _(A),and 513 _(A) and each of memory cells 510 _(B), 511 _(B), 512 _(B), and513 _(B) can include transistors T3 and T4 and one capacitor C, suchthat each of these memory cells can be called a 2T1C memory cell. As acomparison, each memory cell (e.g., memory cell 413 _(A)) of memorydevice 400 includes a 1T1C memory cell.

As shown in FIG. 5A, memory device 500 can include other elements, suchas memory cell 517 _(A) of a memory cell group 502 _(A), memory cell 517_(B) of a memory cell group 502 _(B), plate line 457 (and associatedsignal PL₇). Such other elements are similar to those described above.Thus, for simplicity, detailed description of such other elements ofmemory device 500 is omitted from the description herein.

FIG. 5B shows a side view (e.g., cross-sectional view) of a structure ofa portion of memory device 500 that is schematically shown in FIG. 5A,according to some embodiments described herein. The structure of memorydevice 500 is similar to that of the structure of memory device 400 inFIG. 4B. Thus, for simplicity, detailed description of similar or thesame elements (which are given the same labels in FIG. 4B and FIG. 5B)of memory devices 400 and 500 are not repeated.

As shown in FIG. 5B, conductive lines 580, 581, 582, and 583 can besimilar to (or identical to) word lines 440, 441, 442, and 443,respectively. For example, each of conductive lines 580, 581, 582, and583 can have a length extending in the x-direction and can be shared byrespective memory cells of memory cell groups 501 _(A) and 501 _(B).Each of conductive lines 580, 581, 582, and 583 can also have astructure similar to (or identical to) the structures of word lines 440,441, 442, and 443, such as the structure of word line 443 shown in FIG.4D.

Data lines 520 _(A) and 520 _(B) can be similar to (or identical to)data lines 430 _(A) and 430 _(B), respectively. Data lines 521 _(A) and521 _(B) can be similar to (or identical to) data lines 432 _(A) and 432_(B), respectively. For example, each of data lines 520 _(A), 520 _(B),521 _(A), and 521 _(B) can have a length extending in the y-directionperpendicular to the x-direction. Each of data lines 520 _(A), 520 _(B),521 _(A), 521 _(B) can have a structure similar to (or identical to) thestructures of data line 432 _(A) or 432 _(B) shown in FIG. 4D.

FIG. 5C shows a portion of memory device 500 of FIG. 5B including memorycells 512 _(A), 513 _(A), 512 _(B), and 513 _(B). Some of the elementsshown in FIG. 5C are similar to some of the elements of memory device400 of FIG. 4C; such similar (or the same) elements are given the samelabels and are not described herein for simplicity. As shown in FIG. 5C,the structures and locations of transistor T3 and capacitor plate 402 aare the same as those of memory device 400 (FIG. 4B and FIG. 4C).Transistor T4 in FIG. 5C can include elements similar to those oftransistor T3. For example, transistor T4 can include transistorelements (e.g., body, source, and drain) that are parts of a combinationof a portion P_Si and two n+ portions adjacent the portion P_Si of thesame pillar (pillar 501 _(A) or 501 _(B)), and transistor element (e.g.,gate) that is part of a respective conductive line (one of conductivelines 582 and 583).

FIG. 5D shows a schematic diagram of a portion of memory device 500 ofFIG. 5A including memory cells 512 _(A) and 513 _(A). FIG. 5E is a chartshowing example values of voltages provided to the signals of memorydevice 500 of FIG. 5D during three different example write operations521, 522, and 523, according to some embodiments described herein. Thefollowing description refers to FIG. 5D and FIG. 5E.

In write operation 521, memory cell 512 _(A) is selected to storeinformation, and memory cell 513 _(A) is unselected (e.g., not selectedto store information). In write operation 522, memory cell 513 _(A) isselected to store information, and memory cell 512 _(A) is unselected.In write operation 523 both memory cells 512 _(A) and 513 _(A) areselected to store information.

As shown in FIG. 5E, each of signals PL₂ and PL₃ can be provided with avoltage V4 during a write operation (e.g., any of write operations 521,522, and 523) of memory device 500 regardless of which of memory cells512 _(A) and 513 _(A) is selected. Each of signals RSL₂ and RSL₃ can beprovided with a voltage Va (e.g., Va=0V) in write operations 521, 522,and 523. Signal BLR1 _(A) can be provided with a voltage Vb (e.g.,Vb=0V) in write operations 521, 522, and 523.

In write operation 521, signal WL₃ (associated with unselected memorycell 513 _(A)) can be provided with a voltage V5 (to turn off transistorT3 of unselected memory cell 513 _(A)). Signal WL₂ (associated withselected memory cell 512 _(A)) can be provided with a voltage V6 (toturn on transistor T3 of selected memory cell 512 _(A)). The value ofvoltage V6 can be greater than a supply voltage (e.g., VDD) of memorydevice 500 (e.g., V6>VDD). Signal BL2 _(A) (associated with unselectedmemory cell 513 _(A)) can be provided with a voltage Vx (e.g., Vx=V4).Signal BL1 _(A) (associated with selected memory cell 512 _(A)) can beprovided with a voltage V_(BL1). The value of voltage V_(BL1) can bebased on the value of information to be stored in memory cell 512 _(A).For example, voltage V_(BL1) can have one value (e.g., V_(BL1)=0V orV_(BL1)<0) if information to be stored in memory cell 512 _(A) has onevalue (e.g., “0”), and another value (e.g., V_(BL1)>0V (e.g.,V_(BL1)=1V)) if information to be stored in memory cell 512 _(A) hasanother value (e.g., “1”).

In write operation 522, the voltages provided to signals WL₂ (associatedwith unselected memory cell 512 _(A)) and WL₃ (associated with selectedmemory cell 513 _(A)) can be swapped, such that WL₂=V5 and WL₃=V6.Signal BL1 _(A) (associated with unselected memory cell 512 _(A)) can beprovided with a voltage Vx. Signal BLR1 _(A) (associated with selectedmemory cell 513 _(A)) can be provided with a voltage Vb. Signal BL2 _(A)(associated with selected memory cell 513 _(A)) can be provided with avoltage V_(BL2). The value of voltage V_(BL2) can be based on the valueof information to be stored in memory cell 513 _(A). For example,voltage V_(BL2) can have one value (e.g., V_(BL2)=0V or V_(BL2)<0) ifinformation to be stored in memory cell 513 _(A) has one value (e.g.,“0”), and another value (e.g., V_(BL2)>0V (e.g., V_(BL2)=1V)) ifinformation to be stored in memory cell 513 _(A) has another value(e.g., “1”).

In write operation 523, both memory cells 512 _(A) and 513 _(A) areselected to store information. Thus, the voltages provided to each ofsignals WL₂ and WL₃ can be the same as those in write operations 521 and522 for a selected memory cell, such as WL₂=WL₃=V6, BL1 _(A)=V_(BL1),and BL2 _(A)=V_(BL2).

FIG. 5F is a flow chart showing different stages of a read operation 560of memory device 500 of FIG. 5A through FIG. 5C, according to someembodiments described herein. As shown in FIG. 5F, read operation 560(to read information from a selected memory cell) can include differentstages, such as a pre-sense stage 561, a sense (or read) stage 562, areset stage 563, and a restore stage 564. These stages (561, 562, 563,and 564) can be performed one stage after another in an order shown inFIG. 5F, starting from pre-sense stage 561. In FIG. 5F, sense stage 562(to determine the value of information stored in a selected memory cell)can be performed in two different sense schemes. One sense scheme (e.g.,FIG. 5J) is based on the threshold voltage (Vt) shift of a transistor(e.g., transistor T3) coupled to the selected memory cell. Analternative sense scheme of sensing (e.g., FIG. 5K′) based on a property(e.g., self-latching) of a bipolar junction transistor, which isintrinsically built-in a transistor (e.g., transistor T4) of theselected memory cell.

The stages (561, 562, 563, and 564) of read operation 560 are describedin detail with reference to FIG. 5G through FIG. 5N.

FIG. 5G shows a schematic diagram of a portion of memory device 500 ofFIG. 5A including memory cells 512 _(A) and 513 _(A). FIG. 5H is a chartshowing values of signals in FIG. 5G during pre-sense stage 561 of aread operation associated with FIG. 5F. The following description refersto FIG. 5H (impact ionization pre-sense stage) and FIG. 5G. Memory cell512 _(A) is assumed to be a selected memory cell (to be read in thisexample), and memory cell 513 _(A) is assumed to be an unselected memorycell (not to be read in this example). In pre-sense stage 561, each ofsignals PL₂ and PL₃ can be provided with a voltage V_(PL) (e.g., 0V).Signal BL2 _(A) can be provided with a voltage Vc (e.g., Vc=0V). SignalsWL₃ can be provided with a voltage V_(L) (e.g., V_(L)=0V) to turn offtransistor T3 of memory cell 513 _(A) (unselected memory cell). SignalRSL₃ can be provided with a voltage V_(L) (V_(L)=0V). Signals BLR1 _(A)and BL1 _(A) can be provided with a voltage V_(BL) _(_) _(H). Signal WL₂can be provided with a voltage V_(WL) (0<V_(WL)<V_(BL) _(_) _(H)), andRSL₂ can be provided with a voltage V_(L) (V_(L)<V_(BL) _(_) _(H)).Similar to a pre-sense stage 461 of FIG. 4K, pre-sense stage 561 of FIG.5H can store the information in the body of transistor T3 of memory cell512 _(A) in the forms of holes. The presence or absence of holes in bodyof transistor T3 of memory cell 512 _(A) depends upon the value (“0” or“1”) of information stored in capacitor plate 402 a of memory cell 512_(A).

The following description refers to FIG. 5H′ (GIDL pre-sense stage) andFIG. 5G. Memory cell 512 _(A) is assumed to be a selected memory cell(to be read in this example), and memory cell 513 _(A) is assumed to bean unselected memory cell (not to be read in this example). In pre-sensestage 561 in FIG. 5H′, each of signals PL₂ and PL₃ can be provided witha voltage V_(PL) (e.g., 0V). Signal BL2 _(A) can be provided with avoltage Vc (e.g., Vc=0V). Signals WL₃ can be provided with a voltageV_(L) (e.g., V_(L)=0V) to turn off transistor T3 of memory cell 513 _(A)(unselected memory cell). Signal RSL₃ can be provided with a voltageV_(L) (V_(L)=0V). Signals BLR1 _(A) and BL1 _(A) can be provided with avoltage V_(L). Signal WL₂ can be provided with a voltage V_(WL)(V_(WL)<0). Signal RSL₂ can be provided with a voltage V_(L) (V_(L)=0V).Similar to a pre-sense stage 461 of FIG. 4K′, pre-sense stage 561 ofFIG. H′ can store the information in the body of transistor T3 of memorycell 512 _(A) in the forms of holes. The presence or absence of holes inbody of transistor T3 of memory cell 512 _(A) depends upon the value(“0” or “1”) of information stored in capacitor plate 402 a of memorycell 512 _(A)

FIG. 5I shows a schematic diagram of a portion of memory device 500 ofFIG. 5A including memory cells 512 _(A) and 513 _(A). FIG. 5J is a chartshowing values of signals in FIG. 5I during sense stage 562 using asense scheme based threshold voltage shift. Sense stage 562 is performedafter pre-sense stage 561 (FIG. 5H). The following description refers toFIG. 5I and FIG. 5J. The voltage values of FIG. 5I can be the same thoseshown in FIG. 5H, except for signals BLR1 _(A), RSL₂, WL₂, and BL1 _(A)that can be provided with voltages V_(BL) _(_) _(H), V_(PASS),V_(SENSE), and V_(BL) _(_) _(L), respectively.

Memory device 500 can include a detection circuit (not shown) that canbe coupled to data line 521 _(A) or data line 431 _(A). Memory device500 can use the detection circuit to determine the value (e.g., “0” or“1”) of information stored in memory cell 512 _(A) based on the presenceor absence of current between data lines 532 _(A) and 431 _(A) duringsense stage 562. For example, during sense stage 562, memory device 500can determine that “0” was stored in memory cell 512 _(A) if current isdetected, and “1” was stored in memory cell 512 _(A) if no current (or anegligible of current) is detected. The values of “0” and “1” mentionedhere may be applicable to the case for the impact ionization pre-sensestage. In the case of the GIDL pre-sense stage, the logic may bereversed. Memory device 500 can include storage circuitry to store thevalues (e.g., “0” or “1”) of information sensed from memory cell 512_(A) during sense stage 562. Memory device 500 can use the stored value(e.g., stored in the storage circuitry) as the value for information tobe written back to memory cell 512 a in restore stage 564 (describedbelow). In an alternative sense stage for FIG. 5J, the voltages providedto signals BLR1 _(A) and BL1 _(A) can be switched, such that BLR1_(A)=V_(BL) _(_) _(L) and BL1 _(A)=V_(BL) _(_) _(H).

FIG. 5J′ is a chart showing values of signals in FIG. 5I during a sensestage using an alternative sense scheme based on a property (e.g.,self-latching) of a built-in bipolar junction transistor. The voltagevalues of FIG. 5J′ can be the same those shown in FIG. 5J, except forsignals BLR1 _(A), WL₂, and BL1 _(A) in FIG. 5J′ that can be providedwith voltages V_(BL) _(_) _(L), V_(G), and V_(BL) _(_) _(H),respectively. Voltage V_(G) can be less than zero volts, such as aslightly negative voltage (e.g., V_(G)<0V). Applying voltage V_(G) ofless than zero volts can induce a phenomenon such as impact ionizationcurrent (near data line 521 _(A)) and subsequent BJT latch. Memorydevice 500 can include a detection circuit (not shown) to determine thevalue (e.g., “0” or “1”) of information stored in memory cell 512 _(A)in ways similar to the current detection described above with referenceto FIG. 5J.

FIG. 5K shows a schematic diagram of a portion of memory device 500 ofFIG. 5A including memory cells 512 _(A) and 513 _(A). FIG. 5L is a chartshowing values of signals in FIG. 5K during reset stage 563, which isperformed after sense stage 562 (FIG. 5J). The following descriptionrefers to FIG. 5K and FIG. 5L. The voltage values of FIG. 5L can be thesame those shown in FIG. 5J, except for signals BLR1 _(A) and B1 _(A)that can be provided with voltage V_(BL) _(_) _(X), and signals RSL₂ andWL₂ that can be provided with voltage V_(WLy). The value of voltageV_(BL) _(_) _(X) can be zero volts (e.g., V_(BL) _(_) _(X)=0V).Alternatively, the value of voltage V_(BL) _(_) _(X) can be less thanzero volts, such as a slightly negative voltage (e.g., V_(BL) _(_)_(X)=−0.3V).

In a particular reset stage of a different read operation, memory cells(both shown and not shown in FIG. 5K) adjacent memory cells 513 _(A) maybe reset during that particular reset stage (e.g., similar to resetstage 563 in FIG. 5L) and memory cells 513 _(A) are unselected (orunused) in that read operation. In that particular reset stage (to resetthe adjacent memory cells, both shown and not shown), the value ofvoltages on signals RSL₃ (FIG. 5K) can be less than zero volts (e.g.,slightly less than zero volts, such as RSL₃=Vn (e.g., Vn=−0.3V) ifvoltages of less than zero volts are provided to signals BLR1 _(A) andBL1 _(A) during that particular reset stage. However, in order to avoidtransistor leakage that may be caused by GIDL current, the value ofvoltages on signals RSL₃ (FIG. 5K) can be slightly less than zero voltssuch as RSL₃=Vn, but not too much less than Vn (e.g., −1V<RSL3<−0.3V).

FIG. 5M shows a schematic diagram of a portion of memory device 500 ofFIG. 5A including memory cells 512 _(A) and 513 _(A). FIG. 5N is a chartshowing values of signals in FIG. 5M during restore stage 564, which isperformed after reset stage 563 (FIG. 5K). As described above, restorestage 564 can be performed to restore (e.g., write back) information tomemory cells 512 _(A) and 513 _(A) after memory cells 512 _(A) and 513_(A) were sensed (e.g., based on either the sense scheme shown in FIG.5J or the sense scheme shown in FIG. 5J′). The following descriptionrefers to FIG. 5M and FIG. 5N. As shown in FIG. 5N, signal BL2 _(A) canbe provided with voltage Vx, each of signals WL₃, RSL₂, and RSL₃ can beprovided with signal V_(L) (e.g., V_(L)=0V), signal BLR1 _(A) can beprovided with voltage Vc (e.g., Vc=0V), signal WL₂ can be provided withvoltage V6 (e.g., V6>VDD), and signal BL1 _(A) can be provided withvoltage V_(BL1). Voltage V_(BL1) can have one value (e.g., V_(BL1)=0V orV_(BL1)<0) if information to be restored in memory cell 512 _(A) has onevalue (e.g., “0”), and another value (e.g., V_(BL1)=1V) if informationto be restored in memory cell 512 _(A) has another value (e.g., “1”).Based on the voltages in FIG. 5N, information can be stored (e.g.,restored) in capacitor plate 402 a of memory cell 512 _(A).

FIG. 6 shows a structure of a portion of a memory cell 613 located alonga segment of a pillar 601 of a memory device 600, according to someembodiments described herein. Memory device 600 can include a plate line653, a word line 643, and a data line 631 that can correspond to one ofthe plate lines, one of the word lines, and one of the data lines ofmemory device 400 (FIG. 4B) or memory device 500 (FIG. 5B).

As shown in FIG. 6, pillar 601 can include n+ portions and a P_Siportion. Pillar 601 can be similar to one of the pillars (e.g., pillar401 _(A)′ in FIG. 4B) of memory device 400 (FIG. 4B) or one of thepillars (e.g., pillar 501 _(A)′ in FIG. 5B) of memory device 500 (FIG.5B). Portion P_Si is separated from word line 643 by a dielectric (e.g.,silicon dioxide) 605.

As shown in FIG. 6, memory cell 613 can include a capacitor C′ and atransistor T3′. Capacitor C′ can include a capacitor plate 602 a (whichis part of n+ portion), conductive portion 613′, conductive contacts613″, and a part of plate line 653. Conductive portion 613′ can beformed from a relatively low resistance material (e.g., a material thatcan has a resistance lower than conductively doped polysilicon, such asmetal). Conductive contacts 613″ can also have a relatively lowresistance material that can be similar to the material of conductiveportion 613′. Dielectrics 613 k and 613 o can be different dielectricmaterials that have different dielectric constants. Dielectrics 613 kcan have a dielectric constant greater than the dielectric constant ofdielectric 613 o. For example, dielectric 613 o can be silicon dioxide,and dielectric 613 k can be a high-k dielectric, which is a dielectricmaterial having a dielectric constant greater than the dielectricconstant of silicon dioxide.

The structure of memory cell 613 can be substituted for the structure ofeach of the memory cells (e.g., memory cell 413 _(A) in FIG. 4B) ofmemory device 400 (FIG. 4B) or the structure of each of the memory cells(e.g., memory cell 513 _(A) in FIG. 5B) of memory device 500 (FIG. 5B).For example, the structure of capacitor C′ can be substituted for thestructure of capacitor C in each of the memory cells of memory device400 (FIG. 4B) or memory device 500 (FIG. 5B).

The illustrations of apparatuses (e.g., memory devices 100, 200, 400,500, and 600) and methods (e.g., operations of memory devices 100, 200,400, 500, and 600) are intended to provide a general understanding ofthe structure of various embodiments and are not intended to provide acomplete description of all the elements and features of apparatusesthat might make use of the structures described herein. An apparatusherein refers to, for example, either a device (e.g., any of memorydevices 100, 200, 400, 500, and 600) or a system (e.g., an electronicitem that can include any of memory devices 100, 200, 400, 500, and600).

Any of the components described above with reference to FIG. 1 throughFIG. 6 can be implemented in a number of ways, including simulation viasoftware. Thus, apparatuses, e.g., memory devices 100, 200, 400, 500,and 600, or part of each of these memory devices described above, mayall be characterized as “modules” (or “module”) herein. Such modules mayinclude hardware circuitry, single- and/or multi-processor circuits,memory circuits, software program modules and objects and/or firmware,and combinations thereof, as desired and/or as appropriate forparticular implementations of various embodiments. For example, suchmodules may be included in a system operation simulation package, suchas a software electrical signal simulation package, a power usage andranges simulation package, a capacitance-inductance simulation package,a power/heat dissipation simulation package, a signaltransmission-reception simulation package, and/or a combination ofsoftware and hardware used to operate or simulate the operation ofvarious potential embodiments.

Memory devices 100, 200, 400, 500, and 600 may be included inapparatuses (e.g., electronic circuitry) such as high-speed computers,communication and signal processing circuitry, single- ormulti-processor modules, single or multiple embedded processors,multicore processors, message information switches, andapplication-specific modules including multilayer, multichip modules.Such apparatuses may further be included as subcomponents within avariety of other apparatuses (e.g., electronic systems), such astelevisions, cellular telephones, personal computers (e.g., laptopcomputers, desktop computers, handheld computers, tablet computers,etc.), workstations, radios, video players, audio players (e.g., MP3(Motion Picture Experts Group, Audio Layer 3) players), vehicles,medical devices (e.g., heart monitor, blood pressure monitor, etc.), settop boxes, and others.

The embodiments described above with reference to FIG. 1 through FIG. 6include apparatuses, and methods of operations performed by theapparatuses. One of the apparatuses includes volatile memory cellslocated along a pillar that has a length extending in a directionperpendicular to a substrate of a memory device. Each of the volatilememory cells includes a capacitor and at least one transistor. Thecapacitor includes a capacitor plate. The capacitor plate is eitherformed from a portion a semiconductor material of the pillar or formedfrom a conductive material separated from the pillar by a dielectric.Other embodiments including additional apparatuses and methods aredescribed.

In the detailed description and the claims, a list of items joined bythe term “at least one of” can mean any combination of the listed items.For example, if items A and B are listed, then the phrase “at least oneof A and B” means A only; B only; or A and B. In another example, ifitems A, B, and C are listed, then the phrase “at least one of A, B andC” means A only; B only; C only; A and B (excluding C); A and C(excluding B); B and C (excluding A); or all of A, B, and C. Item A caninclude a single element or multiple elements. Item B can include asingle element or multiple elements. Item C can include a single elementor multiple elements.

In the detailed description and the claims, a list of items joined bythe term “one of” can mean only one of the list items. For example, ifitems A and B are listed, then the phrase “one of A and B” means A only(excluding B), or B only (excluding A). In another example, if items A,B, and C are listed, then the phrase “one of A, B and C” means A only; Bonly; or C only. Item A can include a single element or multipleelements. Item B can include a single element or multiple elements. ItemC can include a single element or multiple elements.

The above description and the drawings illustrate some embodiments ofthe inventive subject matter to enable those skilled in the art topractice the embodiments of the inventive subject matter. Otherembodiments may incorporate structural, logical, electrical, process,and other changes. Examples merely typify possible variations. Portionsand features of some embodiments may be included in, or substituted for,those of others. Many other embodiments will be apparent to those ofskill in the art upon reading and understanding the above description.

What is claimed is:
 1. An apparatus comprising: a pillar including alength extending in a direction perpendicular to a substrate, the pillarincluding a first segment and a second segment, each of the first andsecond segments including a portion of semiconductor material of a firstconductivity type contacting a portion of semiconductor material of asecond conductivity type; a first volatile memory cell including: afirst conductive material located along the first segment and separatedfrom the first segment by a first dielectric; and a first additionalconductive material separated from the first conductive material by afirst additional dielectric; and a second volatile memory cellincluding: a second conductive material located along the second segmentand separated from the second segment by a second dielectric; and asecond additional conductive material separated from the secondconductive material by a second additional dielectric.
 2. The apparatusof claim 1, wherein: the first conductive material forms part of astorage node of the first volatile memory cell; and the secondconductive material forms part of a storage node of the second volatilememory cell.
 3. The apparatus of claim 2, wherein: the portion ofsemiconductor material of the second conductivity type of the firstsegment of the pillar forms part of a channel of a transistor includedin the first volatile memory cell; and the portion of semiconductormaterial of the second conductivity type of the second segment of thepillar forms part of a channel of a transistor included in the secondvolatile memory cell.
 4. The apparatus of claim 3, wherein: the firstadditional conductive material includes a portion surrounding a sidewallof the first additional dielectric; and the second additional conductivematerial includes a portion surrounding a sidewall of the secondadditional dielectric.
 5. The apparatus of claim 1, wherein the firstdielectric and the second dielectric are part of a dielectric regionextending continuously along a sidewall of the pillar.
 6. The apparatusof claim 1, wherein: the first conductivity type is n-type; and thesecond conductivity type is p-type.
 7. An apparatus comprising: a firstpillar including a length extending in a direction perpendicular to asubstrate, a second pillar including a length extending in the directionperpendicular to the substrate; a first volatile memory cell including:a first conductive material including a first portion and a secondportion, the first portion of the first conductive material locatedalong a first segment of the first pillar and separated from the firstsegment of the first pillar by a first dielectric, and the secondportion of the first conductive material contacting a conductivematerial of a first segment of the second pillar; and a second volatilememory cell including: a second conductive material including a firstportion and a second portion, the first portion of the second conductivematerial located along a second segment of the first pillar andseparated from the second segment of the first pillar by a seconddielectric, and the second portion of the second conductive materialcontacting a conductive material of a second segment of the secondpillar.
 8. The apparatus of claim 7, wherein: the first conductivematerial forms part of a storage node of the first volatile memory cell;and the second conductive material forms part of a storage node of thesecond volatile memory cell.
 9. The apparatus of claim 7, wherein thefirst dielectric includes a portion surrounding a sidewall of the firstsegment of the first pillar; the first portion of first conductivematerial surrounds a sidewall of the first dielectric; the seconddielectric includes a portion surrounding a sidewall of the secondsegment of the first pillar; and the first portion of the secondconductive material surrounds a sidewall of the second dielectric. 10.The apparatus of claim 9, wherein: the second portion of the firstconductive material surrounds a sidewall of the conductive material ofthe first segment of the second pillar; and the second portion of thesecond conductive material surrounds a sidewall of the conductivematerial of the second segment of the second pillar.
 11. The apparatusof claim 7, further comprising: a third conductive material including afirst portion and a second portion, the first portion of the thirdconductive material located along of the first pillar and separated froma third segment of the first pillar by a third dielectric, and thesecond portion of the third conductive material located along a thirdsegment of the second pillar and separated from the third segment of thesecond pillar by a third additional dielectric; a fourth conductivematerial including a first portion and a second portion, the firstportion of the fourth conductive material located along a fourth segmentof the first pillar and separated from the third segment of the firstpillar by a fourth dielectric, and the second portion of the fourthconductive material located along a fourth segment of the second pillarand separated from the fourth segment of the second pillar by a fourthadditional dielectric.
 12. The apparatus of claim 11, wherein: the thirdconductive material forms part of a word line associated with the firstvolatile memory cell; and the fourth conductive material forms part of aword line associated with the second volatile memory cell.
 13. Theapparatus of claim 11, wherein: the third and fourth segments of thefirst pillar are between the first and second segments of first pillar;and the third and fourth segments of second pillar are between the firstand second segments of the second pillar.
 14. The apparatus of claim 11,wherein: the third segment of the first pillar is between the first andsecond segments of the first pillar, and the second segment of thesecond pillar is between the third and fourth segments of the firstpillar; and the third segment of the second pillar is between the firstand second segments of the second pillar, and the second segment of thesecond pillar is between the third and fourth segments of the secondpillar.
 15. The apparatus of claim 7, further comprising: an additionalconductive material contacting a conductive material of a third segmentof the second pillar, wherein the third segment of the second pillar isbetween the first and second volatile memory cells.
 16. The apparatus ofclaim 7, further comprising: an additional conductive materialcontacting a conductive material of the second pillar, wherein the firstvolatile memory cell is between the additional conductive material andthe second volatile memory cell.
 17. An apparatus comprising: a pillarincluding a length extending in a direction perpendicular to asubstrate; a first volatile memory cell located along a first segment ofthe pillar, the first volatile memory cell including a first storagenode included in a portion of the first segment of the pillar; a secondmemory cell located along a second segment of the pillar, the secondvolatile memory cell including a second storage node included in aportion of the second segment of the pillar, each of the portion of thefirst segment and the portion of the second segment formed from asemiconductor material of a first conductivity type; and the pillarincluding a third segment located between the first and second segments,the third segment including a portion formed from a semiconductormaterial of a second conductivity type.
 18. The apparatus of claim 17,wherein the portion of the third segment contacts each of the portion ofthe first segment and the portion of the second segment.
 19. Theapparatus of claim 17, further comprising a conductive material,separated from the portion of the third segment by a dielectric.
 20. Theapparatus of claim 18, further comprising a conductive materialcontacting the portion of the third segment.
 21. The apparatus of claim20, wherein: the pillar includes an additional portion contacting afirst side of the portion of the first segment, the additional portionhaving a first thickness in the direction of the length of the pillar;and the portion of the third segment contacts a second side of theportion of the first segment, the portion of the third segment has asecond thickness in the direction of the length of the pillar, and thesecond thickness is greater than the first thickness.
 22. The apparatusof claim 17, wherein: the first segment of the pillar includes anadditional portion contacting the portion of the first segment; and thesecond segment of the pillar includes an additional portion contactingthe portion of the second segment, and each of the additional portion ofthe first segment and the additional portion of the second segment isformed from a semiconductor material of the second conductivity type.23. The apparatus of claim 17, wherein: the first conductivity type isn-type; and the second conductivity type is p-type.
 24. An apparatuscomprising: a substrate included in a volatile memory device; and apillar included in the volatile memory device, the pillar including alength extending in a direction perpendicular to the substrate, thepillar including a first portion, a second portion contacting the firstportion, a third portion contacting the second portion, a fourth portioncontacting the third portion, and a fifth portion contacting the fourthportion, wherein each of the first, third, and fifth portions is formedfrom a semiconductor material of a first conductivity type, and each ofthe second and fourth portions is formed from a semiconductor materialof a second conductivity type.
 25. The apparatus of claim 24, wherein:the first conductivity type is n-type; and the second conductivity typeis p-type.
 26. The apparatus of claim 24, further comprising aconductive material, separated from the fifth portion by a dielectric.27. The apparatus of claim 25, further comprising a conductive materialcontacting the fifth portion.
 28. The apparatus of claim 24, furthercomprising a conductive material contacting the first portion.
 29. Theapparatus of claim 28, further comprising a conductive material,separated from the fifth portion by a dielectric.
 30. The apparatus ofclaim 28, further comprising a conductive material contacting the fifthportion.
 31. The apparatus of claim 24, wherein: the second portion hasa first thickness in the direction of the length of the pillar; and thefourth portion has a second thickness in the direction of the length ofthe pillar, and the second thickness is greater than the firstthickness.
 32. The apparatus of claim 24, wherein the pillar furtherincludes a a sixth portion contacting the fifth portion, and a seventhportion contacting the sixth portion, the sixth portion including asemiconductor material of the second conductivity type, and the seventhportion including a semiconductor material of the first conductivitytype.
 33. The apparatus of claim 32, further comprising: a firstconductive material contacting the first portion; and a secondconductive material contacting the seventh portion.
 34. An apparatuscomprising: a first data line and a second data line; a first volatilememory cell coupled to the first data line, the first data lineconfigured to provide information to be stored in the first volatilememory cell; a second volatile memory cell coupled to the second dataline, the second data line configured to provide information to bestored in the second volatile memory cell; and a switch coupled betweenthe first and second volatile memory cells, the first and secondvolatile memory cells coupled in series with the switch between thefirst and second data lines, the switch configured to turn off duringstoring of the information in the first volatile memory cell, and toturn off during storing of the information in the second volatile memorycell.
 35. The apparatus of claim 34, wherein: the first volatile memorycell includes a first transistor coupled in series between the firstdata line and the switch, and a first capacitor plate located betweenthe first transistor and the switch; and the second volatile memory cellincludes a second transistor coupled in series between the second dataline and the switch, and a second capacitor plate located between thesecond transistor and the switch.
 36. The apparatus of claim 34, whereinthe switch is configured to turn on during sensing of information storedin the first volatile memory cell and during sensing of informationstored in the second volatile memory cell.
 37. The apparatus of claim34, wherein: the first data line is configured to receive a firstvoltage during sensing of information from each of the first and secondvolatile memory cells; and a third data line is configured to receive asecond voltage during sensing of information from each of the first andsecond volatile memory cells.
 38. An apparatus comprising: a first dataline, a second data line, and a third data line; a first volatile memorycell including first and second transistors coupled in series betweenthe first and second data lines, and a first capacitor plate locatedbetween the first and second transistors; and a second volatile memorycell including third and fourth transistors coupled in series betweenthe second and third data lines, and a second capacitor plate locatedbetween the third and fourth transistors.
 39. The apparatus of claim 38,wherein: the first data line is configured to provide information to bestored in the first volatile memory cell; and the third data lineconfigured to provide information to be stored in the second volatilememory cell.
 40. The apparatus of claim 38, wherein the first transistorhas a longer channel length than the second transistor.
 41. A methodcomprising: applying a first voltage during a first stage of a readoperation of a memory device to a first access line coupled to a firstmemory cell and to a second access line coupled to a second memory cell,the first and second memory cells coupled between a first data line anda second data line; applying a second voltage to the first and seconddata lines during the first stage of the read operation; sensing thefirst memory cell during a first time interval of a second stage of theread operation; sensing the second memory cell during a second timeinterval of the second stage of the read operation; applying a thirdvoltage to the first and second access lines during a third stage of theread operation; applying a fourth voltage to the first and second datalines during the third stage of the read operation; storing firstinformation in the first memory cell during a fourth stage of the readoperation; and storing second information in the second memory cellduring the fourth stage of the read operation.
 42. The method of claim41, wherein: sensing the first memory cell includes applying differentvoltages to the first and second access lines; and sensing the secondmemory cell includes applying different voltages to the first and secondaccess lines.
 43. The method of claim 41, wherein: sensing the firstmemory cell includes applying a fifth voltage to the first access line,and applying a sixth voltage to the second access line, the fifthvoltage having a value less than a value of the sixth voltage; andsensing the second memory cell includes applying a seventh voltage tothe first access line, and applying an eighth voltage to the secondaccess line, the seventh voltage having a value greater than a value ofthe eighth voltage.
 44. The method of claim 41, wherein storing firstinformation in the first memory cell and storing second information inthe second memory cell includes: applying a same voltage to the firstand second access lines during storing of first information in the firstmemory cell and during storing of second information in the secondmemory cell.
 45. The method of claim 41, wherein the first voltage has avalue less than a value of the second voltage.
 46. The method of claim41, wherein the fourth voltage has a value at most equal to zero. 47.The method of claim 41, wherein the third voltage has a value greaterthan a value of the fourth voltage.
 48. A method comprising: applying afirst voltage to a gate of a first transistor of a volatile memory cellduring a read operation of a memory device; applying a second voltage toa gate of a second transistor of the volatile memory cell during theread operation, the first and second transistors coupled between a firstdata line and a second data line; sensing the volatile memory cellduring the read operation; and storing information in the volatilememory cell during the read operation after sensing the volatile memorycell.
 49. The method of claim 48, wherein sensing the volatile memorycell includes: applying a third voltage to the gate of the firsttransistor; and applying a fourth voltage to the gate of the secondtransistor, the third and fourth voltages having different values. 50.The method of claim 48, wherein storing information in the volatilememory cell includes: applying a third voltage to the gate of the firsttransistor; and applying a fourth voltage to the first data line, thefourth voltage having a value greater than a value of the third voltage.51. The method of claim 48, further comprising: applying a third voltageto the first data line after sensing the volatile memory cell and beforestoring information in the volatile memory cell, the third voltagehaving a value at most equal to zero; and applying a fourth voltage tothe second data line after sensing the volatile memory cell and beforestoring information in the volatile memory cell, the fourth voltagehaving a value at most equal to zero.